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  • TaC Coated Guide Ring

    TaC Coated Guide Ring

    Semicorex TaC Coated Guide Ring, a pinnacle of innovation in SiC (Silicon Carbide) single crystal growth furnaces. Meticulously designed to meet the exacting demands of the semiconductor industry, this guide ring promises to redefine your crystal growth processes with unparalleled precision and reliability.
  • Durable Focus Rings for Semiconductor Processing

    Durable Focus Rings for Semiconductor Processing

    Semicorex durable focus rings for semiconductor processing are designed to withstand the extreme environments of plasma etch chambers used in semiconductor processing. Our focus rings are made of high-purity graphite coated with a dense, wear-resistant silicon carbide (SiC) coating. The SiC coating has high corrosion and heat resistance properties, as well as excellent thermal conductivity. We apply SiC in thin layers onto the graphite using the chemical vapor deposition (CVD) process to improve the service life of our focus rings.
  • TaC Coated Graphite Susceptor

    TaC Coated Graphite Susceptor

    Semicorex cutting-edge TaC Coated Graphite Susceptor, a revolutionary component designed to elevate your wafer epitaxial process to new heights of efficiency and precision. Crafted with unparalleled expertise and utilizing state-of-the-art technology, Semicorex TaC Coated Graphite Susceptor is engineered to meet the exacting demands of semiconductor manufacturing.
  • Diffusion Furnace Tube

    Diffusion Furnace Tube

    Semicorex Diffusion Furnace Tube is a crucial component within semiconductor manufacturing equipment, specifically designed to facilitate precise and controlled reactions essential for semiconductor fabrication processes. As the primary vessel within the reaction zone of a semiconductor furnace, the diffusion furnace tube plays a pivotal role in ensuring the integrity and quality of the produced semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Quartz Fin Pedestal

    Quartz Fin Pedestal

    Semicorex Semicorex Quartz Fin Pedestal, the indispensable component for enhancing stability and maneuverability in pedestal boats. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Furnace Tubes

    SiC Furnace Tubes

    Semicorex SiC Furnace Tubes are high-purity silicon carbide tube manufactured by advanced 3D printing technology, designed for high-temperature photovoltaic processes. Semicorex delivers cutting-edge SiC solutions with superior strength, stability, and reliability trusted by the solar industry worldwide.*
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  • Annealing

    Annealing after ion implantation is a key step in semiconductor device manufacturing, which affects the performance and reliability of the device.

  • SiC Ceramics: The Indispensable Material for High-Precision Components in Semiconductor Manufacturing

    Semiconductor manufacturing, the cornerstone of modern technological advancement, is in constant pursuit of smaller, faster, and more efficient integrated circuits. This relentless pursuit drives the need for increasingly precise and sophisticated manufacturing processes, where each step relies heavily on high-performance, high-quality, and high-precision equipment. Silicon carbide (SiC), a high-performance structural ceramic material, plays a crucial role in this demanding environment.

  • Method of GaN Crystal Growth

    When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

  • Intrinsic Silicon

    Intrinsic silicon refers to pure silicon that is free from impurities.

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

  • The Fatal Flaw of GaN

    ​As the world searches for new opportunities in the semiconductor field, Gallium Nitride (GaN) continues to stand out as a potential candidate for future power and RF applications. However, despite its numerous benefits, GaN faces a significant challenge: the absence of P-type products. Why is GaN hailed as the next major semiconductor material, why is the lack of P-type GaN devices a critical drawback, and what does this mean for future designs?

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