China Silicon Injector Manufacturers, Suppliers, Factory

Doping involves introducing a dose of impurities into semiconductor materials to alter their electrical properties. Diffusion and ion implantation are two methods of doping. Early impurity doping was primarily accomplished through high-temperature diffusion.

Silicon carbide (SiC) is currently facing challenges in the "price war," while gallium nitride (GaN) is emerging as a key player in the next technological battlefield.

Taiwan's Power Semiconductor Manufacturing Corporation (PSMC) has announced plans to build a 300mm wafer fab in Japan in collaboration with SBI Holdings. The purpose of this collaboration is to strengthen Japan's domestic IC (integrated circuit) supply chain, with a particular focus on circuits for AI edge computing and packaging technologies.

Specialty graphite is graphite with carbon mass fraction greater than 99.99%, also known as "three high graphite" (high strength, high density, high purity). It is characterized by high strength, high density, high purity, high chemical stability, high thermal and electrical conductivity, high temperature resistance, radiation resistance, strong lubrication and easy processing. Isostatic graphite belongs to specialty graphite.

Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.