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China Sic Heat Shields Manufacturers, Suppliers, Factory

We believe in: Innovation is our soul and spirit. Quality is our life. Shopper need is our God for Sic Heat Shields,Graphite Heater,Crucible Silicon Carbide,Carbide Heater,Graphite Crucible With Lid, To acquire a consistent, profitable, and constant development by getting a aggressive advantage, and by continuously increasing the value added to our shareholders and our employee.
Sic Heat Shields, We welcome you to visit our company and factory. It is also convenient to visit our website. Our sales team will present you the best service. If you have to have more information, remember to feel free to contact us by E-mail or telephone. We have been sincerely hope to establish a good long-term business relationship with you through this opportunity, based on equal, mutual benefit from now till the future.

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    Semicorex ZrO2 Crucible is crafted from stabilized zirconia ceramic, presenting a standard composition of 94.7% zirconium dioxide (ZrO2) and 5.2% yttrium oxide (Y2O3) by weight percentage, or alternatively, 97% ZrO2 and 3% Y2O3 by mol percentage. This precise formulation endows the ZrO2 Crucible with a suite of advantageous characteristics that cater specifically to the demands of high-performance industrial processes.**
  • Pancake Susceptor for Wafer Epitaxial Process

    Pancake Susceptor for Wafer Epitaxial Process

    Semicorex pancake susceptor for wafer epitaxial process is a high purity graphite base by CVD SiC coated. Our pancake susceptor for wafer epitaxial process has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Wafer Holder

    SiC Wafer Holder

    Semicorex SiC (Silicon Carbide) SiC Wafer Holder, also known as a wafer chuck or wafer carrier, is a specialized tool used in the handling and processing of semiconductor wafers. It is designed to securely hold and protect the delicate silicon carbide wafers during various stages of fabrication. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Coating Flat Part

    SiC Coating Flat Part

    Semicorex SiC Coating Flat Part is a SiC-coated graphite component essential for uniform airflow conduction in the SiC epitaxy process. Semicorex delivers precision-engineered solutions with unmatched quality, ensuring optimal performance for semiconductor manufacturing.*
  • SiC Coated Graphite Susceptor for MOCVD

    SiC Coated Graphite Susceptor for MOCVD

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC Coated Graphite Susceptor for MOCVD has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • RTP Carrier for MOCVD Epitaxial Growth

    RTP Carrier for MOCVD Epitaxial Growth

    Semicorex RTP Carrier for MOCVD Epitaxial Growth is ideal for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Carbon graphite susceptors and quartz crucibles are processed by MOCVD on the surface of graphite, ceramics, etc. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • Why Choose Pressureless Sintering for SiC Ceramic Preparation?

    The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

  • Method of GaN Crystal Growth

    When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

  • The Fatal Flaw of GaN

    ​As the world searches for new opportunities in the semiconductor field, Gallium Nitride (GaN) continues to stand out as a potential candidate for future power and RF applications. However, despite its numerous benefits, GaN faces a significant challenge: the absence of P-type products. Why is GaN hailed as the next major semiconductor material, why is the lack of P-type GaN devices a critical drawback, and what does this mean for future designs?

  • TaC coated crucible in SiC crystal growth

    TaC coated crucibles have become an important technical solution as reaction vessels in the growth process of silicon carbide (SiC) crystals.

  • Silicon Carbide Substrate

    The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

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