English
Home > Products > SiC Dry Etching

China SiC Dry Etching Manufacturers, Suppliers, Factory

"Control the quality by the details, show the strength by quality". Our company has strived to establish a highly efficient and stable staff team and explored an effective quality control process for SiC Dry Etching,Etch Carrier(ICP/PSS),Plasma Etching Disc,Etch Carrier Holder,SiC Coated Etching Fixtures, Welcome any inquiry to our firm. We will be happy to ascertain helpful business enterprise relationships along with you!
SiC Dry Etching, Customer's satisfaction is always our quest, creating value for customers is always our duty, a long term mutual-beneficial business relationship is what we're doing for. We have been an absolutely reliable partner for you personally in China. Of course, other services, like consulting, can be offered too.

Related Products

Hot Products

  • Ga2O3 Epitaxy

    Ga2O3 Epitaxy

    Step into a new era of semiconductor excellence with Semicorex Ga2O3 Epitaxy, a groundbreaking solution that redefines the boundaries of power and efficiency. Engineered with precision and innovation, Ga2O3 epitaxy offers a platform for next-generation devices, promising unmatched performance across various applications.
  • Single-crystal Silicon Epi Susceptor

    Single-crystal Silicon Epi Susceptor

    The Single-crystal Silicon Epi Susceptor is an essential component designed for Si-GaN epitaxy processes, which can be tailored to individualized specifications and preferences, providing a bespoke solution that aligns perfectly with specific requirements. Whether it entails modifications in dimensions or adjustments in coating thickness, we possess the capability to design and deliver a product that accommodates diverse process parameters, thereby optimizing performance for targeted applications. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • Epi-SiC Susceptor

    Epi-SiC Susceptor

    Semicorex Epi-SiC Susceptor, a component engineered with meticulous attention to detail, is indispensable for cutting-edge semiconductor fabrication, especially in epitaxial applications. The Epi-SiC Susceptor’s design, which embodies precision and innovation, supports the epitaxial deposition of semiconductor materials on wafers, ensuring exceptional efficiency and dependability in performance. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • SiC Robot Arm

    SiC Robot Arm

    Semicorex SiC Robot Arm is a high-performance silicon carbide ceramic robotic arm designed for precision and durability in semiconductor manufacturing processes. Choose Semicorex for our expertise in delivering innovative, reliable, and high-quality solutions tailored to the semiconductor industry's needs.*
  • Quartz Wafer Boat Bracket

    Quartz Wafer Boat Bracket

    Semicorex Quartz Wafer Boat Bracket is an indispensable component in the production of semiconductor wafers and photovoltaic cells, offering exceptional material properties and design features, ensuring wafer stability, and improve process outcomes.
  • Graphite Heating Industrial Element

    Graphite Heating Industrial Element

    Semicorex graphite heating industrial element is one of the most important parts of high-temperature vacuum sintering furnaces. It's essential for a variety of thermal processes due to their sophisticated material qualities.
  • Related Blog
  • Reviews

  • Japan recently restricted exports of 23 types of semiconductor manufacturing equipment

    Japan recently restricted exports of 23 types of semiconductor manufacturing equipment. The announcement has sent ripples across the industry, as the move is expected to have a significant impact on global supply chains for semiconductor manufacturing.

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

  • High-Purity CVD Thick SiC: Process Insights for Material Growth

    Thick, high-purity silicon carbide (SiC) layers, typically exceeding 1mm, are critical components in various high-value applications, including semiconductor fabrication and aerospace technologies. This article delves into the Chemical Vapor Deposition (CVD) process for producing such layers, highlighting key process parameters, material characteristics, and emerging applications.

  • How is Silicon Carbide Ceramic Applied and What is its Future in Wear and High-Temperature Resistance?

    Silicon carbide (SiC) ceramics, known for their high strength, hardness, wear resistance, corrosion resistance, and high-temperature stability, have demonstrated immense potential and value across numerous industrial sectors since their introduction.

  • How Are Ceramic Electrostatic Chucks Actually Produced?

    In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process. Any deviation can lead to uneven ion bombardment, causing undesirable angles and variations in etching rates. To address these challenges, engineers have developed Electrostatic Chucks (ESCs), which have significantly improved etching quality and stability. This article delves into the design and functionality of ESCs, focusing on one key aspect: the electrostatic principles behind wafer adhesion.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept