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SiC crystal growth, We are eager to cooperate with foreign companies which care much on the real quality, stable supply, strong capability and good service. We can offer the most competitive price with high quality,because we are much MORE PROFESSIONAL. You are welcomed to visit our company at any time.

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    Semicorex Graphite Ion Implanter stands as a critical component in the realm of semiconductor manufacturing, distinguished by its fine particle composition, excellent conductivity, and resilience to extreme conditions.
  • SiC Tubes

    SiC Tubes

    Semicorex SiC Tubes are silicon carbide furnace tubes designed for semiconductor high-temperature processes, with excellent thermal stability and chemical corrosion resistance. Choosing Semicorex high-purity raw materials, precision manufacturing processes and long-term reliability guarantees to provide solid support for your semiconductor manufacturing process.*
  • SiC Wafer Transfer Hand

    SiC Wafer Transfer Hand

    Semicorex SiC Wafer Transfer Hand stands as a cornerstone of automation within the semiconductor manufacturing process, serving as a sophisticated robotic tool for the precise and efficient handling of semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Film

    Silicon Film

    Semicorex Silicon Film, or silicon wafer, is a high-purity semiconductor substrate essential for applications in integrated circuits, solar cells, and MEMS devices. Semicorex expertise in precision manufacturing and stringent quality control ensures that our Silicon Film meets the highest industry standards, providing exceptional reliability and performance for advanced semiconductor applications.*
  • SiC Ceramic Cantilever Paddle

    SiC Ceramic Cantilever Paddle

    Large wafer loading force silicon carbide SiC ceramic cantilever paddle is suitable for a robot automatic loading and handling system because it has stable performance, non-deformation in high temperature and large wafer loading force. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Furnace Tubes

    SiC Furnace Tubes

    Semicorex SiC Furnace Tubes are high-purity silicon carbide tube manufactured by advanced 3D printing technology, designed for high-temperature photovoltaic processes. Semicorex delivers cutting-edge SiC solutions with superior strength, stability, and reliability trusted by the solar industry worldwide.*
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  • Reviews

  • Silicon Carbide Wafer Boat

    Behind every high-temperature process in wafer manufacturing lies a silent yet crucial player: the wafer boat. As the core carrier that directly contacts the silicon wafer during the wafer processing, its material, stability, and cleanliness are directly related to the final chip yield and process stability. Among various carrier materials, silicon carbide (SiC) boats are gradually replacing traditional quartz solutions, becoming the preferred solution for advanced processes and high-end equipment.

  • SiC Coated Susceptors in MOCVD Processes

    CVD SiC coated susceptors function as specialized wafer holders in Metal-Organic Chemical Vapor Deposition (MOCVD) processes, playing a crucial role in semiconductor fabrication. These components are vital for maintaining the structural integrity of wafers during epitaxy under extreme conditions, such as high temperatures and corrosive environments. **

  • Dry Etching vs Wet Etching

    In semiconductor fabrication, etching is one of the major steps, along with photolithography and thin-film deposition. It involves removing unwanted materials from the surface of a wafer using chemical or physical methods. This step is carried out after coating, photolithography, and developing. It is used to remove the exposed thin film material, leaving only the desired portion of the wafer, and then removing the excess photoresist. These steps are repeated numerous times to create complex integrated circuits.

  • Gallium Nitride Epitaxial Wafers: An Introduction to the Fabrication Process

    Gallium Nitride (GaN) epitaxial wafer growth is a complex process, often utilizing a two-step method. This method involves several critical stages, including high-temperature baking, buffer layer growth, recrystallization, and annealing. By meticulously controlling the temperature throughout these stages, the two-step growth method effectively prevents wafer warping caused by lattice mismatch or stress, making it the predominant fabrication method for GaN epitaxial wafers globally.

  • Dislocation in SiC crystals

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

  • Chip shortage continues to be a problem

    While there is currently an oversupply of memory semiconductors due to a sluggish global economy, analog chips for automotive and industrial applications remain in short supply. Lead times for these analog chips can be as long as 40 weeks, compared to around 20 weeks for memory stocks.

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