English
Home > Products > SiC-Coated Sputtering System Component

China SiC-Coated Sputtering System Component Manufacturers, Suppliers, Factory

We insist on offering high-quality output with superior small business concept, honest profits along with the best and fast service. it will bring you not only the top quality product and huge profit, but one of the most significant will be to occupy the endless market for SiC-Coated Sputtering System Component,Silicon Carbide-Coated,SiC Graphite Supplies Susceptors,Graphite Susceptors for Silicon,SiC Coating for GaN Epitaxy, We often hold the philosophy of win-win, and establish long-term cooperation connection with consumers from around the planet.We think that our expansion base on customer's achievement, credit rating is our daily life.
SiC-Coated Sputtering System Component, After years' creating and developing, with the advantages of trained qualified talents and rich marketing experience, outstanding achievements were gradually made. We get good reputation from the customers due to our good solutions quality and fine after-sale service. We sincerely wish to create a more prosperous and flourishing future together with all the friends home and abroad!

Related Products

Hot Products

  • Wafer Carrier Handles

    Wafer Carrier Handles

    Semicorex Wafer Carrier Handles, made from high-quality PFA material, are designed for the safe and efficient transport of semiconductor wafers within wafer cassettes. Choose Semicorex for our commitment to providing durable, high-purity components that ensure superior performance and reliability in semiconductor manufacturing processes.*
  • Silicon Film

    Silicon Film

    Semicorex Silicon Film, or silicon wafer, is a high-purity semiconductor substrate essential for applications in integrated circuits, solar cells, and MEMS devices. Semicorex expertise in precision manufacturing and stringent quality control ensures that our Silicon Film meets the highest industry standards, providing exceptional reliability and performance for advanced semiconductor applications.*
  • SOI Wafers

    SOI Wafers

    Semicorex SOI Wafers represent a critical advancement in this field, offering numerous advantages over traditional silicon wafers. At Semicorex, we are proud to manufacture and supply SOI wafers that meet the rigorous demands of modern semiconductor applications.*
  • Ceramic Axle Sleeve

    Ceramic Axle Sleeve

    Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Ceramic Axle Sleeve has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Coated Halfmoon Parts

    SiC Coated Halfmoon Parts

    Semicorex SiC coated Halfmoon Parts are precision-engineered components designed as essential elements of epitaxial equipment, where two half-moon shaped sections combine to form a complete core assembly. Choosing Semicorex means securing reliable, high-purity, and durable solutions that ensure stable wafer support and efficient heat conduction for advanced semiconductor manufacturing.*
  • Ring Set

    Ring Set

    Unlock the full potential of your semiconductor epitaxial processes with Semicorex Ring Set – a crucial component crafted from SiC-coated graphite. Designed to elevate the efficiency and reliability of your epitaxial growth, this small yet powerful accessory plays a key role in ensuring optimal performance within semiconductor manufacturing environments.
  • Related Blog
  • Reviews

  • Application of SiC and GaN in electric vehicles

    SiC MOSFETs are transistors that offer high power density, improved efficiency, and low failure rates at high temperatures. These advantages of SiC MOSFETs bring numerous benefits to electric vehicles (EVs), including longer driving range, faster charging, and potentially lower cost battery electric vehicles (BEVs). Over the past five years, SiC MOSFETs have been widely used in the power electronics of EVs in vehicles from OEMs such as Tesla and Hyundai. In fact, SiC inverters accounted for 28% of the BEV market in 2023.

  • The Crucial Role of Epitaxial Layers in Semiconductor Devices

    Epitaxial growth refers to the process of growing a crystallographically well-ordered monocrystalline layer on a substrate. Generally speaking, epitaxial growth involves the cultivation of a crystal layer on a single-crystal substrate, with the grown layer sharing the same crystallographic orientation as the original substrate. Epitaxy is extensively utilized in semiconductor manufacturing, such as the production of epitaxial silicon wafers in the integrated circuit industry.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • AlN crystal growth by PVT method

    The third generation of wide bandgap semiconductor materials, including gallium nitride (GaN), silicon carbide (SiC), and aluminum nitride (AlN), exhibit excellent electrical, thermal, and acousto-optical properties. These materials address the limitations of the first and second generation of semiconductor materials, significantly advancing the semiconductor industry.

  • Silicon Carbide Substrate Core Process Flow

    Silicon carbide substrate is a compound semiconductor single crystal material composed of two elements, carbon and silicon. It has the characteristics of large bandgap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept