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  • SiN Ceramics Plain Substrates

    SiN Ceramics Plain Substrates

    SiN Ceramics Plain Substrates is a high-performance material known for its thermal stability, mechanical strength, electrical insulation, corrosion resistance, and dielectric properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Fused Quartz Tube

    Fused Quartz Tube

    Semicorex premium Fused Quartz Tube, meticulously crafted from semiconductor-grade quartz to meet the exacting standards of modern semiconductor processing. Engineered for precision and reliability, this high-performance quartz tube is an indispensable component in the semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • MOCVD Heater

    MOCVD Heater

    The MOCVD Heater by Semicorex is a highly advanced and meticulously engineered component that offers a multitude of advantages, including exceptional chemical purity, thermal efficiency, electrical conductivity, high emissivity, corrosion resistance, inoxidizability, and mechanical strength.**
  • PBN Composite Heaters

    PBN Composite Heaters

    Semicorex PBN Composite Heaters are advanced heating elements engineered for high-temperature, ultra-clean vacuum environments, widely used in semiconductor, optoelectronics, and material research industries. Choose Semicorex for industry-leading expertise, small-batch customization, and world-class quality in PBN heating solutions.*
  • Porous SiC Chuck

    Porous SiC Chuck

    Semicorex Porous SiC Chuck is a high-performance ceramic vacuum chuck designed for secure and uniform wafer adsorption in semiconductor processing. Its engineered micro-porous structure ensures excellent vacuum distribution, making it ideal for precision applications.*
  • Monocrystalline silicon planar target

    Monocrystalline silicon planar target

    Monocrystalline silicon planar target from Semicorex is a crucial component in cutting-edge semiconductor manufacturing industry. Manufactured by top-quality monocrystalline silicon material, it features a highly ordered crystal structure and remarkable purity. These properties make it an ideal solution for manufacturing reliable, high-performance semiconductor films and optical films.
  • Related Blog
  • Reviews

  • What is SiC epitaxy?

    Silicon Carbide (SiC) epitaxy is a key technology in the field of semiconductors, particularly for the development of high-power electronic devices. SiC is a compound semiconductor with a wide bandgap, which makes it ideal for applications that require a high-temperature and high-voltage operation.

  • What are epitaxial wafers used for?

    Epitaxial wafers have been used in the electronics industry for decades, but their importance has only increased as technology has advanced. In this article, we will explore what epitaxial wafers are and why they are such an essential component of modern electronics.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • 4th Generation Semiconductors Gallium Oxide/β-Ga2O3

    The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

  • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

    Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

  • Research Progress of TaC Coatings on Carbon-Based Material Surfaces

    Carbon-based materials such as graphite, carbon fibers, and carbon/carbon (C/C) composites are known for their high specific strength, high specific modulus, and excellent thermal properties, making them suitable for a wide range of high-temperature applications. These materials are widely utilized in aerospace, chemical engineering, and energy storage. However, their susceptibility to oxidation and corrosion in high-temperature environments, along with poor scratch resistance, restricts their further application.

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