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    Looking for a reliable wafer carrier for etching processes? Look no further than Semicorex's Silicon Carbide ICP Etching Carrier. Our product is engineered to withstand high temperatures and harsh chemical cleaning, ensuring durability and longevity. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • ICP Etching Carrier Plate

    ICP Etching Carrier Plate

    Semicorex's ICP Etching Carrier Plate is the perfect solution for demanding wafer handling and thin film deposition processes. Our product provides superior heat and corrosion resistance, even thermal uniformity, and laminar gas flow patterns. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • SiC-Coated ICP Component

    SiC-Coated ICP Component

    Semicorex's SiC-Coated ICP Component is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a fine SiC crystal coating, our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance.
  • SiC Coating Graphite Substrate Wafer Carriers for MOCVD

    SiC Coating Graphite Substrate Wafer Carriers for MOCVD

    You can rest assured to buy SiC Coating Graphite Substrate Wafer Carriers for MOCVD from our factory. At Semicorex, we are a large-scale manufacturer and supplier of SiC Coated Graphite Susceptor in China. Our product has a good price advantage and covers many of the European and American markets. We strive to provide our customers with high-quality products that meet their specific requirements. Our SiC Coating Graphite Substrate Wafer Carrier for MOCVD is an excellent choice for those looking for a high-performance carrier for their semiconductor manufacturing process.
  • TaC Coated Porous Graphite

    TaC Coated Porous Graphite

    Semicorex TaC Coated Porous graphite, is an advanced high-purity material on semiconductor processing. This crucial piece of equipment plays a pivotal role in the process of single crystal SiC growth. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Tantalum Carbide Coated Porous Graphite

    Tantalum Carbide Coated Porous Graphite

    Semicorex Tantalum Carbide Coated Porous Graphite is the latest innovation in Silicon Carbide (SiC) crystal growth technology. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
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  • Japan recently restricted exports of 23 types of semiconductor manufacturing equipment

    Japan recently restricted exports of 23 types of semiconductor manufacturing equipment. The announcement has sent ripples across the industry, as the move is expected to have a significant impact on global supply chains for semiconductor manufacturing.

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • Applications of TaC Coated Graphite Components

    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

  • Thin film growth process

    Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

  • What is Silicon Nitride

    Silicon nitride (Si3N4) is a key material in the development of advanced high-temperature structural ceramics.

  • SiC Single Crystal Substrate Processing

    Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

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