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    Custom SiC Cantilever Paddle

    Semicorex Custom SiC Cantilever Paddle has become an indispensable component in the photovoltaic industry, playing a critical role in the efficient and precise handling of silicon wafers during high-temperature diffusion processes. The Custom SiC Cantilever Paddle, meticulously engineered from high-performance silicon carbide (SiC) ceramics, offers a unique blend of properties essential for maintaining wafer integrity, ensuring process uniformity, and maximizing productivity in demanding diffusion furnace environments.**
  • AlN Single Crystal Wafer

    AlN Single Crystal Wafer

    Semicorex AlN single crystal wafer is a cutting-edge semiconductor substrate designed for high-power, high-frequency, and deep ultraviolet (UV) applications. Choosing Semicorex ensures access to industry-leading crystal growth technology, high-purity materials, and precise wafer fabrication, guaranteeing superior performance and reliability for demanding applications.*
  • Silicon Nitride Disk

    Silicon Nitride Disk

    Semicorex Silicon Nitride Disk represents a pinnacle of material science innovation, combining the exceptional properties of silicon and nitrogen into a versatile and robust disk-shaped form. Crafted through advanced manufacturing processes, this Silicon Nitride Disk embodies high thermal stability, superior mechanical strength, remarkable wear resistance, and excellent chemical inertness. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • N-type Silicon Carbide Powder

    N-type Silicon Carbide Powder

    Semicorex N-type Silicon Carbide powder (SiC) is a high-purity, doped SiC material specifically designed for advanced crystal growth applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Epitaxy Susceptor

    SiC Epitaxy Susceptor

    Crafted with precision and engineered for reliability, SiC Epitaxy Susceptor features high corrosion resistance, high thermal conductivity, resistance to thermal shock, and high chemical stability, enabling it to function effectively within an epitaxial atmosphere.Therefore, SiC Epitaxy Susceptor is considered a core and crucial component in MOCVD equipment. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC ICP Etching Disk

    SiC ICP Etching Disk

    Semicorex SiC ICP Etching Disk is not merely components; it's essential enabler of cutting-edge semiconductor manufacturing as the semiconductor industry continues its relentless pursuit of miniaturization and performance, the demand for advanced materials like SiC will only intensify. It ensures the precision, reliability, and performance required to power our technology-driven world.We at Semicorex are dedicated to manufacturing and supplying high-performance SiC ICP Etching Disk that fuses quality with cost-efficiency.**
  • Related Blog
  • Reviews

  • What is graphitization degree?

    The degree of graphitization is an essential measure used to assess how close carbon atoms are to forming a tightly-packed hexagonal graphite crystal structure.

  • What is cantilever paddles?

    The wafer boats, loaded with a batch of wafers to be processed, are positioned on long cantilevered paddles.

  • The Surge and Outlook of the Silicon Carbide (SiC) Power Device Market

    As global acceptance of electric vehicles gradually increases, Silicon Carbide (SiC) will encounter novel growth opportunities in the forthcoming decade. It is anticipated that manufacturers of power semiconductors and operators in the automotive industry will participate more actively in the construction of this sector’s value chain.

  • Tantalum carbide coatings in semiconductor industry

    The development of high-powered blue and UV LEDs has enabled the creation of full-color LED TV displays, as well as white LED automotive and domestic lighting. These LEDs are based on Gallium Nitride, which is deposited on substrate wafers supported by CVD SiC-coated graphite susceptor using the MOCVD process.

  • Semiconductor doping process

    One of the unique properties of semiconductor materials is that their conductivity, as well as their conductivity type (N-type or P-type), can be created and controlled through a process called doping. This involves introducing specialized impurities, known as dopants, into the material to form junctions on the surface of the wafer. The industry employs two main doping techniques: thermal diffusion and ion implantation.

  • Crystal Orientation and Defects in Silicon Wafers

    The basic crystal unit cell of monocrystalline silicon is the zinc blende structure, in which each silicon atom bonds chemically with four neighboring silicon atoms. This structure is also found in monocrystalline carbon diamonds.

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