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Using a complete scientific high quality management program, superior high quality and superior faith, we acquire great reputation and occupied this industry for Semiconductor Wafer Manufacturing,Monocrystalline Silicon,Epi Process Semiconductor,Epitaxial Growth Of Silicon,Veeco K465I, 1st business enterprise, we find out each other. Even further business enterprise, the trust is getting there. Our enterprise always at your services at any time.
Semiconductor Wafer Manufacturing, We strongly believe that technology and service is our base today and quality will create our reliable walls of future. Only we've got better and better quality , could we achieve our customers and ourselves, too. Welcome customers all over the word to contact us for getting further business and reliable relationships. We've been always here working for your demands whenever you need to have.

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    With its excellent density and thermal conductivity, the Semicorex Durable SiC-Coated Barrel Susceptor is the ideal choice for use in epitaxial processes and other semiconductor manufacturing applications. Its high-purity SiC coating provides superior protection and heat distribution properties, making it the go-to choice for reliable and consistent results.
  • RTP SiC Coating Carrier

    RTP SiC Coating Carrier

    Semicorex RTP SiC Coating Carrier offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With its high-quality SiC coated graphite, this product is designed to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.
  • SiC Boat

    SiC Boat

    Semicorex SiC Boat is advanced component meticulously designed for semiconductor manufacturing, specifically in diffusion and thermal processes. With our unwavering commitment to providing high-quality products at competitive prices, we are prepared to be your long-term partner in China.*
  • AlN Heater

    AlN Heater

    The AlN Heater by Semicorex is designed to support and heat silicon wafers. Crafted from high-purity aluminum nitride (AlN), this heater offers an array of advanced features that cater to the needs of various high-precision applications, particularly in the semiconductor industry.**
  • Porous SiC Plate

    Porous SiC Plate

    Semicorex Porous SiC Plate is an advanced ceramic material designed for high-precision applications, offering superior mechanical strength, thermal stability, and chemical resistance. *
  • SiC Coated Wafer Carriers

    SiC Coated Wafer Carriers

    Semicorex SiC Coated Wafer Carriers are high-purity graphite susceptors coated with CVD silicon carbide, designed for optimal wafer support during high-temperature semiconductor processes. Choose Semicorex for unmatched coating quality, precision manufacturing, and proven reliability trusted by leading semiconductor fabs worldwide.*
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  • What is isostatic graphite?

    Specialty graphite is graphite with carbon mass fraction greater than 99.99%, also known as "three high graphite" (high strength, high density, high purity). It is characterized by high strength, high density, high purity, high chemical stability, high thermal and electrical conductivity, high temperature resistance, radiation resistance, strong lubrication and easy processing. Isostatic graphite belongs to specialty graphite.

  • The first 6-inch Gallium Oxide substrate industrialization company

    Recently, our company announced that the company has successfully developed a 6-inch Gallium Oxide single crystal using the casting method, becoming the first domestic industrialized company to master the 6-inch Gallium Oxide single crystal substrate preparation technology.

  • Applications of TaC Coated Graphite Components

    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

  • What is Thermal Field?

    In the field of single crystal growth, the temperature distribution within the crystal growth furnace plays a critical role. This temperature distribution, commonly referred to as the thermal field, is a vital factor that influences the quality and characteristics of the crystal being grown. The thermal field can be categorized into two types: static and dynamic.

  • The Study on Reaction-Sintered SiC Ceramics and Their Properties

    Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.

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