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Our personnel are generally in the spirit of "continuous improvement and excellence", and together with the outstanding top quality merchandise, favorable price tag and fantastic after-sales solutions, we try to gain every single customer's rely on for Semiconductor Epitaxial Furnace Equipment,Silicon Carbide Coating Graphite Trays,Silicon Carbide Coated Susceptor for Crystal Growth;,Coated Semiconductor Fabrication Tool,Single Crystal Silicon Epitaxy, Warmly welcome to cooperate and develop with us! we will continue to provide product with high quality and competitive price.
Semiconductor Epitaxial Furnace Equipment, Our skilled engineering group will always be ready to serve you for consultation and feedback. We are able to also offer you with absolutely free samples to meet your requirements. Finest efforts will likely be produced to offer you the ideal service and items. For anyone who is thinking about our company and merchandise, remember to contact us by sending us emails or contact us quickly. As a way to know our merchandise and firm. lot more, you can come to our factory to find out it. We are going to always welcome guests from all over the world to our business to build company relations with us. Remember to feel free to get in touch with us for business and we believe we've been going to share the top trading practical experience with all our merchants.

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  • Spare Parts in Epitaxial Growth

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  • What is P-type SiC wafer?

    A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

  • Final polishing of the silicon wafer surface

    To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

  • Annealing Processes in Modern Semiconductor Manufacturing

    As technology nodes continue to shrink, the formation of ultra-shallow junctions presents significant challenges. Thermal annealing processes including Rapid thermal annealing (RTA) and flash lamp annealing (FLA) are vital techniques that maintain high impurity activation rates while minimizing diffusion, ensuring optimal device performance.

  • What is liquid phase epitaxy?

    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

  • Conductive Coated Graphite Heaters

    The conductive coated graphite heater is a new product designed for high temperature semiconductor processing and other vacuum thermal systems.

  • What are the challenges of silicon carbide substrate production?

    Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

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