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  • ICP Plasma Etching Plate

    ICP Plasma Etching Plate

    Semicorex's ICP Plasma Etching Plate provides superior heat and corrosion resistance for wafer handling and thin film deposition processes. Our product is engineered to withstand high temperatures and harsh chemical cleaning, ensuring durability and longevity. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • Ceramic Wafer Carrier

    Ceramic Wafer Carrier

    Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components focusing on silicon carbide layers in semiconductor industries. We have been manufacturer and supplier of Ceramic Wafer Carrier for many years. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Wafer Cassette Carrier

    Wafer Cassette Carrier

    Semicorex high-quality Wafer Cassette Carrier, a crucial component designed for excellence in semiconductor processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC ICP Etching Plate

    SiC ICP Etching Plate

    Semicorex SiC ICP Etching Plate is an advanced and indispensable component in the semiconductor industry, designed to enhance the precision and efficiency of etching processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • MOCVD 3x2’’ Susceptor

    MOCVD 3x2’’ Susceptor

    Semicorex MOCVD 3x2’’ Susceptor developed by Semicorex represents a pinnacle of innovation and engineering excellence, specifically tailored to meet the intricate demands of contemporary semiconductor manufacturing processes.**
  • Wafer Washing Cassette

    Wafer Washing Cassette

    Semicorex Wafer Washing Cassette, made from high-performance PFA material, is designed to securely hold and clean wafers in semiconductor, photovoltaic, and electronics manufacturing. Choose Semicorex for our commitment to delivering durable, reliable, and customizable products that enhance your production efficiency and product quality.*
  • Related Blog
  • Reviews

  • Different types of SiC ceramics

    Silicon carbide (SiC) ceramic is a type of advanced ceramic material known for its exceptional properties and wide range of applications. It is composed of silicon (Si) and carbon (C) atoms arranged in a crystal lattice structure, resulting in a hard and strong material with excellent thermal and electrical conductivity.

  • The Crucial Role of Epitaxial Layers in Semiconductor Devices

    Epitaxial growth refers to the process of growing a crystallographically well-ordered monocrystalline layer on a substrate. Generally speaking, epitaxial growth involves the cultivation of a crystal layer on a single-crystal substrate, with the grown layer sharing the same crystallographic orientation as the original substrate. Epitaxy is extensively utilized in semiconductor manufacturing, such as the production of epitaxial silicon wafers in the integrated circuit industry.

  • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

  • Introducing Silicon Material

    Silicon is the second most abundant element on Earth after oxygen. Most silicon is found in soil, rocks, natural water, trees, and plants.

  • Application of GaN

    There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.

  • Semiconductor doping process

    One of the unique properties of semiconductor materials is that their conductivity, as well as their conductivity type (N-type or P-type), can be created and controlled through a process called doping. This involves introducing specialized impurities, known as dopants, into the material to form junctions on the surface of the wafer. The industry employs two main doping techniques: thermal diffusion and ion implantation.

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