English
Home > Products > Planetary Gear Carrier

China Planetary Gear Carrier Manufacturers, Suppliers, Factory

Our crew through skilled training. Skilled skilled knowledge, strong sense of company, to meet the company wants of customers for Planetary Gear Carrier,Silicon Carbon,12 Inch Wafer,1 Inch Wafer Carrier,Epitaxial Silicon Growth, Created merchandise with brand price. We attend seriously to produce and behave with integrity, and via the favor of buyers at your house and overseas inside the xxx industry.
Planetary Gear Carrier, In order to meet more market demands and long-term development, a 150, 000-square-meter new factory is under construction, which might be put into use in 2014. Then, we shall own a large capacity of producing. Of course, we will continue improving the service system to meet the requirements of customers, bringing health, happiness and beauty to everyone.

Related Products

Hot Products

  • Vertical Wafer Boat

    Vertical Wafer Boat

    Semicorex Vertical Wafer Boat represents a crucial component within semiconductor processing, designed to securely house and transport delicate silicon wafers throughout various stages of fabrication. Crafted from Silicon Carbide (SiC), a robust and thermally stable material renowned for its exceptional properties in harsh environments, these boats ensure the integrity and safety of wafers during processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Tantalum Carbide Coating Halfmoon Part

    Tantalum Carbide Coating Halfmoon Part

    Semicorex Tantalum Carbide Coating Halfmoon Part is a highly specialized component designed for use in the epitaxial deposition process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Disc Susceptor

    SiC Disc Susceptor

    Semicorex introduces its SiC Disc Susceptor, designed to elevate the performance of Epitaxy, Metal-Organic Chemical Vapor Deposition (MOCVD), and Rapid Thermal Processing (RTP) equipment. The meticulously engineered SiC Disc Susceptor provides with properties that guarantee superior performance, durability, and efficiency in high-temperature and vacuum environments.**
  • Self-lubricating Bearings

    Self-lubricating Bearings

    Semicorex self-lubricating bearings are a type of bearing that combines the self-lubricating properties of graphite materials. They are widely used in industrial fields with high lubrication requirements and complex environmental conditions.
  • Graphite Slide Plate

    Graphite Slide Plate

    Semicorex's graphite slide plate has self-lubricating capabilities, which can effectively reduce mechanical running resistance, improve operational efficiency, and minimize mechanical failures caused by insufficient or failed lubrication.
  • CCB Brakes with Coating

    CCB Brakes with Coating

    Semicorex Carbon Ceramic Composite CCB Brakes with Coating represent the cutting edge of high-performance braking technology, combining the exceptional thermal and mechanical properties of carbon–ceramic materials with the advanced protection and durability offered by specialized surface coatings. Choosing Semicorex means selecting reliability, precision, and superior performance under the most demanding conditions—where consistent braking power, long lifespan, and safety are non-negotiable.*
  • Related Blog
  • Reviews

  • SiC Epitaxy

    There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

  • What is graphitising？

    Graphitising is the process of transforming non-graphitic charcoal into graphitic charcoal with graphite three-dimensional regular ordered structure by high-temperature heat treatment, making full use of electrical resistance heat to heat the charcoal material to 2300~3000 ℃, and transforming the charcoal with amorphous chaotic layer structure into ordered graphite crystalline structure.

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • Ion Implant and Diffusion Process

    Ion implantation is a method of semiconductor doping and one of the main processes in semiconductor manufacturing.

  • Oxidation in Semiconductor Processing

    Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.

  • Synthesizing High-Purity Silicon Carbide Powder

    High-Purity Silicon Carbide Powder features exceptional wide bandgap characteristics, which make it an ideal material for manufacturing high-frequency, high-power electronic devices.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept