English
Home > Products > Planet Satellite Platter

China Planet Satellite Platter Manufacturers, Suppliers, Factory

We believe in: Innovation is our soul and spirit. Quality is our life. Shopper need is our God for Planet Satellite Platter,Silicon Carbide-Coated,SiC Graphite Supplies Susceptors,Graphite Susceptors for Silicon,SiC Coating for GaN Epitaxy, To acquire a consistent, profitable, and constant development by getting a aggressive advantage, and by continuously increasing the value added to our shareholders and our employee.
Planet Satellite Platter, We maintain long-term efforts and self-criticism, which helps us and improvement constantly. We strive to improve customer efficiency to save costs for customers. We do our best to improve the quality of product. We are going to not live up to the historic opportunity of the times.

Related Products

Hot Products

  • Silicon Carbide Chuck

    Silicon Carbide Chuck

    Semicorex Silicon Carbide Chuck is a highly specialized component used in semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Rigid Insulation

    Rigid Insulation

    Semicorex Rigid Insulation is a high-performance short fiber hard felt, specially developed for thermal management in epitaxy equipment. Choosing Semicorex means choosing proven expertise, premium materials, and customized solutions that ensure the highest purity, reliability, and efficiency for your semiconductor manufacturing processes.*
  • Semiconductor SiC Components for Epitaxial

    Semiconductor SiC Components for Epitaxial

    Enhance the capabilities and efficiency of your semiconductor equipment with our groundbreaking Semiconductor SiC Components for Epitaxial. These semi-cylindrical components are specifically engineered for the intake section of epitaxial reactors, playing a crucial role in optimizing semiconductor manufacturing processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Al2O3 Vacuum Chuck

    Al2O3 Vacuum Chuck

    Semicorex Al2O3 Vacuum Chuck is designed to meet the rigorous demands of various semiconductor production processes, including thinning, dicing, cleaning, and transporting wafers. **
  • Alumina Chuck

    Alumina Chuck

    Semicorex Alumina Chuck stands as a cornerstone tool within semiconductor processing, meticulously crafted from alumina ceramics. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Ceramic End Effector

    Ceramic End Effector

    Semicorex is your partner for advanced graphite components and assemblies to support higher throughput and better yields in your semiconductor processing equipment. Our materials experts are ready to work with you to develop the optimal right solution for your wafer handling, heating, and processing requirements. Our Ceramic End Effector has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • What is graphitization degree?

    The degree of graphitization is an essential measure used to assess how close carbon atoms are to forming a tightly-packed hexagonal graphite crystal structure.

  • Japan recently restricted exports of 23 types of semiconductor manufacturing equipment

    Japan recently restricted exports of 23 types of semiconductor manufacturing equipment. The announcement has sent ripples across the industry, as the move is expected to have a significant impact on global supply chains for semiconductor manufacturing.

  • What is P-type SiC wafer?

    A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • What Applications of Gallium Nitride (GaN) Substrate?

    Gallium Nitride (GaN) is an important material in semiconductor technology, known for its exceptional electronic and optical properties. GaN, as a wide-bandgap semiconductor, has a bandgap energy of approximately 3.4 eV, making it ideal for high-power and high-frequency applications.

  • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept