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  • Graphite Susceptor with SiC Coating

    Graphite Susceptor with SiC Coating

    Semicorex Graphite Susceptor with SiC Coating is an essential component designed for silicon epitaxy processes in Applied Materials and LPE (Liquid Phase Epitaxy) units. Crafted from high-quality graphite material coated with Silicon Carbide (SiC), this susceptor ensures superior performance and longevity in semiconductor manufacturing environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Coated ICP Etching Carrier

    SiC Coated ICP Etching Carrier

    Semicorex SiC Coated ICP Etching Carrier engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Silicon Carbide ICP Etching Carrier

    Silicon Carbide ICP Etching Carrier

    Looking for a reliable wafer carrier for etching processes? Look no further than Semicorex's Silicon Carbide ICP Etching Carrier. Our product is engineered to withstand high temperatures and harsh chemical cleaning, ensuring durability and longevity. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • Alumina Ceramic Vacuum Chuck

    Alumina Ceramic Vacuum Chuck

    Semicorex Alumina Ceramic Vacuum Chuck is applied in the wafer thinning and grinding processes of semiconductor manufacturing, serving as an indispensable tool for achieving high-precision and reliable semiconductor production.**
  • SiC Coating Flat Part

    SiC Coating Flat Part

    Semicorex SiC Coating Flat Part is a SiC-coated graphite component essential for uniform airflow conduction in the SiC epitaxy process. Semicorex delivers precision-engineered solutions with unmatched quality, ensuring optimal performance for semiconductor manufacturing.*
  • Refined Graphite Mold

    Refined Graphite Mold

    Semicorex Refined Graphite Mold is a versatile and efficient tool in various industrial casting and molding processes. Its high purity, low thermal expansion, and excellent surface finish make it a preferred choice for applications requiring precision and quality.
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  • SiGe in Chip Manufacturing: A Professional News Report

    To meet the demands for high performance and low power consumption in the realm of modern semiconductor technology, SiGe (Silicon Germanium) has emerged as a composite material of choice in semiconductor chip manufacturing due to its unique physical and electrical properties.

  • Semiconductor ceramic parts

    Semiconductor ceramic parts belong to advanced ceramics and are an indispensable part of the semiconductor manufacturing process. The raw materials for preparation are usually high-purity, ultra-fine inorganic materials, such as aluminum oxide, silicon carbide, aluminum nitride, silicon nitride, yttrium oxide, zirconium oxide, etc.

  • Silicon Carbide Wafer Boat

    Behind every high-temperature process in wafer manufacturing lies a silent yet crucial player: the wafer boat. As the core carrier that directly contacts the silicon wafer during the wafer processing, its material, stability, and cleanliness are directly related to the final chip yield and process stability. Among various carrier materials, silicon carbide (SiC) boats are gradually replacing traditional quartz solutions, becoming the preferred solution for advanced processes and high-end equipment.

  • Ceramic Heaters

    In the front-end process (FEOL) of semiconductor manufacturing, the wafer needs to be subjected to various process treatments, especially the wafer needs to be heated to a certain temperature, and there are strict requirements, because the uniformity of temperature has a very important impact on the product yield; at the same time, semiconductor equipment needs to work in the presence of vacuum, plasma and chemical gases, which requires the use of ceramic heaters.

  • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

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