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  • MOCVD SiC Coated Graphite Susceptor

    MOCVD SiC Coated Graphite Susceptor

    Semicorex MOCVD SiC Coated Graphite Susceptor is an advanced and specialized component used in the Metal-Organic Chemical Vapor Deposition process, a crucial technique in the production of semiconductors, optoelectronic devices, and other advanced materials. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • CVD SiC Ring

    CVD SiC Ring

    Semicorex CVD SiC Ring stands as an essential component within the intricate landscape of semiconductor manufacturing, specifically designed to play a crucial role in the etching process. Crafted with precision and innovation, this ring is exclusively fashioned from Chemical Vapor Deposition Silicon Carbide (CVD SiC), exemplifying a material known for its exceptional properties in the demanding semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiN Plates

    SiN Plates

    Semicorex SiN Plates are versatile materials, prized for their mechanical strength, thermal conductivity, and electrical insulation, making them ideal for circuit substrates and heat spreaders. Choosing Semicorex SiN plates ensures high-quality, reliable performance for advanced electronic applications, backed by cutting-edge technology and stringent quality control.*
  • CFC Rod

    CFC Rod

    Semicorex CFC Rod is specially designed for use in load-bearing applications, such as shafts in high-temperature vacuum furnaces and specialized atmosphere ovens.
  • SiC Coated Waferholder

    SiC Coated Waferholder

    Semicorex SiC Coated Waferholder is a high-performance component designed for the precise placement and handling of SiC wafers during epitaxy processes. Choose Semicorex for its commitment to delivering advanced, reliable materials that enhance the efficiency and quality of semiconductor manufacturing.*
  • Silicon Carbide Sleeve

    Silicon Carbide Sleeve

    Semicorex Silicon Carbide Sleeve is commonly used as a wear-resistant and corrosion-resistant liner for equipment such as cylinders, pumps, valves, sliding bearings, and grinder drums.
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  • Reviews

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • What is SOI

  • What are SiC-coated graphite susceptors?

    The tray (base) that supports SiC wafers, also known as a "susceptor," is a core component of semiconductor manufacturing equipment. And what exactly is this susceptor that carries the wafers?

  • What is a SiC Boat, and What are its Various Manufacturing Processes?

    A SiC boat, short for silicon carbide boat, is a high-temperature-resistant accessory used in furnace tubes to carry wafers during high-temperature processing. Due to the outstanding properties of silicon carbide such as resistance to high temperatures, chemical corrosion, and excellent thermal stability, SiC boats are extensively utilized in various thermal treatment processes including diffusion, oxidation, Chemical Vapor Deposition (CVD), and annealing.

  • Oxidation Process

    The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

  • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

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