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  • Silicon Carbide-Coated Graphite Barrel

    Silicon Carbide-Coated Graphite Barrel

    The Semicorex Silicon Carbide-Coated Graphite Barrel is the perfect choice for semiconductor manufacturing applications that require high heat and corrosion resistance. Its exceptional thermal conductivity and heat distribution properties make it ideal for use in LPE processes and other high-temperature environments.
  • Etching Carrier Holder for PSS Etching

    Etching Carrier Holder for PSS Etching

    Semicorex's Etching Carrier Holder for PSS Etching is engineered for the most demanding epitaxy equipment applications. Our ultra-pure graphite carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The SiC coated carrier has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • ICP Plasma Etching System

    ICP Plasma Etching System

    Semicorex's SiC Coated carrier for ICP Plasma Etching System is a reliable and cost-effective solution for high-temperature wafer handling processes such as epitaxy and MOCVD. Our carriers feature a fine SiC crystal coating that provides superior heat resistance, even thermal uniformity, and durable chemical resistance.
  • LPE Halfmoon Reaction Chamber

    LPE Halfmoon Reaction Chamber

    Semicorex LPE Halfmoon Reaction Chamber is indispensable for the efficient and reliable operation of SiC epitaxy, ensuring the production of high-quality epitaxial layers while reducing maintenance costs and increasing operational efficiency. **
  • 8-inch Waferholder Rings

    8-inch Waferholder Rings

    Semicorex 8-inch Waferholder Rings are designed to provide precise wafer fixation and exceptional performance in aggressive thermal and chemical environments. Semicorex delivers application-specific engineering, tight dimensional control, and consistent SiC coating quality to meet the rigorous demands of advanced semiconductor processing.*
  • SiC Lid

    SiC Lid

    Semicorex SiC Lid is a high-purity silicon carbide component engineered for extreme semiconductor processing environments. Choosing Semicorex means ensuring unmatched material quality, precision engineering, and custom solutions trusted by leading semiconductor manufacturers worldwide.*
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  • What are epitaxial wafers used for?

    Epitaxial wafers have been used in the electronics industry for decades, but their importance has only increased as technology has advanced. In this article, we will explore what epitaxial wafers are and why they are such an essential component of modern electronics.

  • China remained the largest semiconductor equipment market

    Worldwide sales of semiconductor manufacturing equipment increased 5 percent from $102.6 billion in 2021 to an all-time record of $107.6 billion last year, SEMI, the industry association representing the global electronics design and manufacturing supply chain.

  • What is the process of SiC epitaxial?

    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

  • What is CVD for SiC

  • What is graphitising？

    Graphitising is the process of transforming non-graphitic charcoal into graphitic charcoal with graphite three-dimensional regular ordered structure by high-temperature heat treatment, making full use of electrical resistance heat to heat the charcoal material to 2300~3000 ℃, and transforming the charcoal with amorphous chaotic layer structure into ordered graphite crystalline structure.

  • Method of GaN Crystal Growth

    When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

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