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We believe that long expression partnership is often a result of top of the range, value added service, prosperous encounter and personal contact for Monocrystalline Silicon Panels,Single Crystal Silicon Carbide,CZ Crystal Growing,Monocrystalline Solar Panel,Substrat Wafer, Are you still on the lookout for a good quality product that is in accordance together with your very good organization image while expanding your item range? Consider our quality merchandise. Your choice will prove to be intelligent!
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    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

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    AlN, as third-generation semiconductor material, is not only an important blue light and ultraviolet light material, but also an important packaging, dielectric isolation and insulation material for electronic devices and integrated circuits, especially suitable for high-temperature and high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

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