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Good quality comes initial; company is foremost; small business is cooperation" is our business philosophy which is frequently observed and pursued by our business for LTOI,Litium Tantalate Thin Film Wafers,Litium Tantalate,LiTaO3,Lithium Tantalate On Insulator Wafer, We promise to try our best to provide you with high quality and efficient services.
LTOI, We focus on providing service for our clients as a key element in strengthening our long-term relationships. Our continual availability of high grade solutions in combination with our excellent pre-sale and after-sales service ensures strong competitiveness in an increasingly globalized market. We have been willing to cooperate with business friends from at home and abroad and create a great future together.

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  • PSS Etching Carrier Tray for LED

    PSS Etching Carrier Tray for LED

    At Semicorex, we have designed the PSS Etching Carrier Tray for LED specifically for the harsh environments required for epitaxial growth and wafer handling processes. Our ultra-pure graphite carrier is ideal for thin-film deposition phases like MOCVD, epitaxy susceptors, pancake or satellite platforms, and wafer handling processing such as etching. The SiC coated carrier has high heat and corrosion resistance, excellent heat distribution properties, and a high thermal conductivity. Our PSS Etching Carrier Tray for LED is cost-effective and offer a good price advantage. We cater to many European and American markets and look forward to becoming your long-term partner in China.
  • Blue Green LED Epitaxial Susceptor

    Blue Green LED Epitaxial Susceptor

    Semicorex Blue Green LED Epitaxial Susceptors make the manufacture of high-quality LED wafers more efficient. We have been manufacturer and supplier of silicon carbide coated susceptor for many years. Our Blue Green LED Epitaxial Susceptor has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Tantalum Carbide Coated Graphite Parts

    Tantalum Carbide Coated Graphite Parts

    Semicorex provide high-quality Tantalum Carbide Coated Graphite Parts with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Wafer Tray

    SiC Wafer Tray

    The Semicorex SiC Wafer Tray is a vital asset in the Metal-Organic Chemical Vapor Deposition (MOCVD) process, meticulously designed to support and heat semiconductor wafers during the essential step of epitaxial layer deposition. This tray is integral to semiconductor device manufacturing, where the precision of layer growth is of utmost importance. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Wafer Tray that fuse quality with cost-efficiency.
  • Al2O3 Vacuum Chucks

    Al2O3 Vacuum Chucks

    Semicorex Al2O3 Vacuum Chucks are microporous ceramic adsorption fixture made from black alumina with a porosity of 35–40%, specifically designed for wafer handling in semiconductor applications. Choosing Semicorex means benefiting from advanced ceramic technology, precision engineering, and reliable product quality that ensure stable performance in demanding cleanroom environments.*
  • SiC Coated Heaters

    SiC Coated Heaters

    Semicorex SiC Coated Heaters are CVD SiC-coated graphite heating components designed for semiconductor thermal fields, providing efficient heat generation, excellent corrosion resistance, and long-term reliability in high-temperature processing equipment. Semicorex supplies customized SiC-coated graphite heaters and complete thermal field solutions to semiconductor manufacturers worldwide, backed by advanced CVD coating technology, precision engineering, and dependable global delivery.*
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  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • Methods of AlN Crystal Growth

    AlN, as third-generation semiconductor material, is not only an important blue light and ultraviolet light material, but also an important packaging, dielectric isolation and insulation material for electronic devices and integrated circuits, especially suitable for high-temperature and high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

  • The first 6-inch Gallium Oxide substrate industrialization company

    Recently, our company announced that the company has successfully developed a 6-inch Gallium Oxide single crystal using the casting method, becoming the first domestic industrialized company to master the 6-inch Gallium Oxide single crystal substrate preparation technology.

  • GaN Single Crystal

    Semiconductor technology has been the backbone of modern civilization, fundamentally transforming the way we live, work, and interact with the world. It has enabled unprecedented advancements in various fields including information technology, energy, telecommunications, and healthcare. From the microprocessors that power our smartphones and computers, to the sensors in medical devices, and the power electronics in renewable energy systems, semiconductors are at the core of nearly every technological innovation of the past century.

  • Structural differences between different types of reactors

    Based on the reaction chamber configuration, heat treatment equipment (furnace tube equipment) is mainly divided into three categories: vertical furnace tubes, horizontal furnace tubes, and rapid thermal processing (RTP) furnaces.

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