LTOI Wafer

Semicorex offers high-quality LTOI wafer, designed for advanced applications in RF filters, optical devices, and MEMS technologies. Our wafers feature a Lithium Tantalate (LT) layer with a thickness range of 0.3-50 µm, ensuring exceptional piezoelectric performance and thermal stability.

Available in 6-inch and 8-inch sizes, these wafers support various crystal orientations, including X, Z, and Y-42 cuts, providing versatility for different device requirements. The insulating substrate can be customized to Si, SiC, sapphire,

 spinel, or quartz, optimizing performance for specific applications.

Lithium tantalate (LT, LiTaO3) crystal is an important multifunctional crystal material with excellent piezoelectric, ferroelectric, acousto-optic and electro-optic effects. Acoustic-grade LT crystals that meet piezoelectric applications can be used to prepare high-frequency broadband acoustic resonators, transducers, delay lines, filters and other devices, which are used in mobile communications, satellite communications, digital signal processing, television, broadcasting, radar, remote sensing and telemetry and other civil fields, as well as electronic countermeasures, fuses, guidance and other military fields.

Traditional surface acoustic wave (SAW) devices are prepared on LT single crystal blocks, and the devices are large and not compatible with CMOS processes. The use of high-performance piezoelectric single crystal thin films is a good option to improve the integration of SAW devices and reduce costs. SAW devices based on piezoelectric single crystal thin films can not only improve the integration capability of SAW devices by using semiconductor materials as substrates, but also improve the transmission speed of sound waves by selecting high-speed silicon, sapphire or diamond substrates. These substrates can suppress the loss of waves in transmission by guiding the energy inside the piezoelectric layer. Therefore, choosing the right piezoelectric single crystal film and preparation process is the key factor to obtain high-performance, low-cost, and highly integrated SAW devices.

In order to meet the urgent needs of the next generation of piezoelectric acoustic devices for integration, miniaturization, high frequency, and large bandwidth under the development trend of integration and miniaturization of RF front-end, the smart-cut technology combining crystal ion implantation stripping technology (CIS) and wafer bonding technology can be used to prepare single crystal LT film on insulator (LTOI wafer), which provides a new solution and solution for the development of higher performance and lower cost RF signal processing devices. LTOI is a revolutionary technology. SAW devices based on LTOI wafer have the advantages of small size, large bandwidth, high operating frequency, and IC integration, and have broad market application prospects.

Crystal ion implantation stripping (CIS) technology can prepare high-quality single crystal thin film materials with submicron thickness, and has the advantages of controllable preparation process, adjustable process parameters such as ion implantation energy, implantation dose, and annealing temperature. As CIS technology matures, the Smart-Cut technology based on CIS technology and wafer bonding technology can not only improve the yield of substrate materials, but also further reduce costs through multiple utilization of materials. Figure 1 is a schematic diagram of ion implantation and wafer bonding and peeling. Smart-Cut technology was first developed by SOITEC in France and applied to the preparation of high-quality silicon-on-insulator (SOI) wafers [18]. Smart-Cut technology can not only produce high-quality and low-cost SOI wafers, but also control the thickness of Si on the insulating layer by changing the ion implantation energy. Therefore, it has a strong advantage in the preparation of SOI materials. In addition, Smart-Cut technology also has the ability to transfer a variety of single crystal films to different substrates. It can be used to prepare multilayer thin film materials with special functions and applications, such as constructing LT films on Si substrates and preparing high-quality piezoelectric thin film materials on silicon (Si). Therefore, this technology has become an effective means to prepare high-quality lithium tantalate single crystal films.