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Good quality comes initial; company is foremost; small business is cooperation" is our business philosophy which is frequently observed and pursued by our business for Inlet Port,Inlet Flange Ring,MOCVD Gas Injector,Inlet Nozzle Ring,MOCVD Gas Delivery System, We give priority to good quality and customer fulfillment and for this we follow stringent excellent control measures. We've in-house testing facilities where our goods are tested on each and every aspect at different processing stages. Owning to latest technologies, we facilitate our prospects with custom-made production facility.
Inlet Port, Facing fierce global market competition, we have launched the brand building strategy and updated the spirit of ""human-oriented and faithful service"", with an aim to gain global recognition and sustainable development.

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    MOCVD Vacuum Chamber Lid used in crystal growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex Silicon Carbide Coated MOCVD Vacuum Chamber Lid engineered specifically stand up to these challenging environments. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Barrel Susceptor with SiC Coating in Semiconductor

    Barrel Susceptor with SiC Coating in Semiconductor

    If you're looking for a high-quality graphite susceptor coated with high-purity SiC, the Semicorex Barrel Susceptor with SiC Coating in Semiconductor is the perfect choice. Its exceptional thermal conductivity and heat distribution properties make it ideal for use in semiconductor manufacturing applications.
  • GaN-on-SiC Substrate

    GaN-on-SiC Substrate

    Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our GaN-on-SiC Substrate susceptors have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Alumina Insulation Ring

    Alumina Insulation Ring

    Semicorex Alumina Insulation Ring is employed as an insulator in various electrical components, its excellent electrical insulation properties ensures reliable performance in applications where preventing electrical conduction is essential.
  • SiC Epi Wafers

    SiC Epi Wafers

    Semicorex SiC epi wafers are becoming a key material for promoting technological innovation in high-frequency, high-temperature, and high-power application scenarios due to their excellent physical properties. Semicorex SiC Epi Wafers use industry-leading epitaxial growth technology and are designed to meet the high-end needs of new energy vehicles, 5G communications, renewable energy, and industrial power supplies, providing customers with high-performance, high-reliability core semiconductor solutions.*
  • SiC Boat for Wafer Handling

    SiC Boat for Wafer Handling

    Crafted from a silicon carbide of exceptional purity, the Semicorex SiC Boat for Wafer Handling boasts a construction that includes precision slots to secure the wafers, mitigating any movement during operational procedures. The choice of silicon carbide as the material ensures not only hardness and resilience but also the capability to endure elevated temperatures and exposure to chemicals. This makes the SiC Boat for Wafer Handling a pivotal component in a multitude of semiconductor production stages, such as the cultivation of crystals, diffusion, ion implantation, and etching processes.
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  • What is recrystallized silicon carbide ceramic？

    Recrystallized silicon carbide is a high-performance ceramic formed by combining SiC particles through an evaporation-condensation mechanism to form a strong solid-phase sintered body. Its most notable feature is that no sintering aids are added, and the final product is almost pure silicon carbide, which gives it extremely excellent high-temperature performance and chemical stability.

  • Substrate Cutting and Grinding Process

    SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

  • What is Thermal Annealing

    The annealing process, also known as Thermal Annealing, is a crucial step in semiconductor manufacturing.

  • Silicon Nitride Ceramic Substrate

    Silicon Nitride Ceramic Substrate is a high-performance ceramic substrate made of silicon nitride (Si₃N₄) as the core material. Its main components are silicon (Si) and nitrogen (N) elements, which are chemically bonded to form Si₃N₄.

  • Czochralski method

    Wafers are sliced from crystal rods, which are produced from polycrystalline and pure undoped intrinsic materials. The process of transforming polycrystalline material into single crystals through melting and recrystallization is known as crystal growth. Currently, two main methods are employed for this process: the Czochralski method and the zone melting method. Among these, the Czochralski method (often referred to as the CZ method) is the most significant for growing single crystals from melts. In fact, over 85% of single crystal silicon is produced using the Czochralski method.

  • What are the technical difficulties of SiC crystal growth furnace

    The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.

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