English
Home > Products > Horizontal Chamber

China Horizontal Chamber Manufacturers, Suppliers, Factory

We are commitment to offer the competitive price ,outstanding products quality, as well as fast delivery for Horizontal Chamber,Silicon Carbide,SiC,wafer boats,SiC boats, We have ISO 9001 Certification and qualified this product or service .in excess of 16 years experiences in manufacturing and designing, so our goods featured with very best high-quality and aggressive rate. Welcome cooperation with us!
Horizontal Chamber, We've customers from more than 20 countries and our reputation has been recognized by our esteemed customers. Never-ending improvement and striving for 0% deficiency are our two main quality policies. Ought to you want anything, don't hesitate to contact us.

Related Products

Hot Products

  • Porous Carbon

    Porous Carbon

    Semicorex porous carbon, is an advanced high-purity material on semiconductor processing. This crucial piece of equipment plays a pivotal role in the process of single crystal SiC growth. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • CVD SiC Coated Barrel Susceptor

    CVD SiC Coated Barrel Susceptor

    Semicorex CVD SiC Coated Barrel Susceptor is a meticulously engineered component tailored for advanced semiconductor manufacturing processes, particularly epitaxy. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • TaC Coating Half-moon

    TaC Coating Half-moon

    Semicorex TaC Coating Half-moon is a specialized component crafted from tantalum carbide (TaC) coated graphite, designed for use in epitaxial processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Halfmoon Part for LPE

    Halfmoon Part for LPE

    Semicorex Halfmoon Part for LPE is a TaC-coated graphite component designed for use in LPE reactors, playing a critical role in SiC epitaxy processes. Choose Semicorex for its high-quality, durable components that ensure optimal performance and reliability in demanding semiconductor manufacturing environments.*
  • Black Zirconia Ring

    Black Zirconia Ring

    Semicorex Black Zirconia Ring is a high-performance component that offers a unique blend of mechanical strength, hardness, and resistance to both thermal and chemical challenges in sealing and insulation to machining and metallurgical processes.
  • Silicon Wafer Boat

    Silicon Wafer Boat

    Semicorex Silicon Wafer Boat is a high-purity carrier designed for semiconductor high-temperature furnaces, supporting wafers during oxidation and reduction processes at 1200–1250 °C. Semicorex provide superior products, ultra-clean performance, and reliable results that directly enhance device yield.*
  • Related Blog
  • Reviews

  • Silicon Carbide Heating Elements

    In the world of high-temperature heating, achieving precision and reliability in extreme conditions is paramount. To meet these challenges, innovative materials and designs have been developed to push the boundaries of what's possible. One such advancement is the Silicon Carbide (SiC) coated graphite heating element.

  • What are the challenges of silicon carbide substrate production?

    Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

  • Applications of TaC Coated Graphite Components

    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

  • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

  • Oxidation Process

    The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

  • Application of GaN

    There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept