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We depend on sturdy technical force and continually create sophisticated technologies to satisfy the demand of High-Temperature SiC-Coated,Barrel for 3" Diameter Wafer,SiC Coated Graphite Barrel Susceptors,Barrel Type Susceptors,LPE Vertical Susceptor Wafer, Our skilled complex workforce is going to be wholeheartedly at your assistance. We sincerely welcome you to definitely pay a visit to our site and firm and deliver us your inquiry.
High-Temperature SiC-Coated, With the goal of "zero defect". To care for the environment, and social returns, care employee social responsibility as own duty. We welcome friends from all over the world to visit and guide us so that we can achieve the win-win goal together.

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  • Wafer Cassette

    Wafer Cassette

    Semicorex wafer cassette made of PFA (Perfluoroalkoxy) is specifically designed for use in semiconductor processes. PFA is a high-performance fluoropolymer known for its excellent chemical resistance, thermal stability, and low particle generation characteristics. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Wafer Vacuum Chuck

    Wafer Vacuum Chuck

    Perfect for next-generation lithography and wafer-handling applications, Semicorex ultra-pure ceramic components ensure minimal contamination and provide exceptionally long life performance. Our Wafer Vacuum Chuck has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • TaC Tantalum Carbide Coated Plate

    TaC Tantalum Carbide Coated Plate

    Semicorex TaC Tantalum Carbide Coated Plate is a cutting-edge solution designed to meet the stringent demands of semiconductor manufacturing, particularly in the epitaxial (epi) processing stage. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Porous Carbon

    Porous Carbon

    Semicorex porous carbon, is an advanced high-purity material on semiconductor processing. This crucial piece of equipment plays a pivotal role in the process of single crystal SiC growth. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • PSS Handling Carrier for Wafer Transfer

    PSS Handling Carrier for Wafer Transfer

    Semicorex's PSS Handling Carrier for Wafer Transfer is engineered for the most demanding epitaxy equipment applications. Our ultra-pure graphite carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The SiC coated carrier has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • Graphite Rotor and Shaft

    Graphite Rotor and Shaft

    Semicorex graphite rotor and shaft assemblies are crucial parts that are mostly used for degassing in the smelting of aluminium and aluminium alloys.
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  • Surface Polishing of Silicon Wafers

    Silicon wafer surface polishing is a crucial process in semiconductor manufacturing. Its primary goal is to achieve extremely high standards of surface flatness and roughness by removing micro-defects, layers of stress damage, and contamination from impurities such as metal ions.

  • What Are the Applications of SiC and TaC Coatings in the Semiconductor Field?

    Semiconductors are materials whose electrical conductivity at room temperature lies between that of insulators and conductors. By introducing impurities, a process known as doping, these materials can become conductors.

  • What is the Difference Between Graphitization and Carbonization

    In conclusion, both graphitization and carbonization are industrial processes that involve carbon either as a reactant or a product. Carbonization refers to the process of converting organic matter into carbon, while graphitization involves transforming carbon into graphite. Therefore, carbonization is classified as a chemical change, whereas graphitization is recognized as a microstructural change.

  • Homoepitaxy and Heteroepitaxy Explained Simply

    Homoepitaxy and heteroepitaxy play pivotal roles in material science. Homoepitaxy involves the growth of a crystalline layer on a substrate of the same material, ensuring minimal defects due to perfect lattice matching. In contrast, heteroepitaxy grows a crystalline layer on a different material substrate, which can lead to challenges like lattice mismatch. These processes are crucial in advancing semiconductor devices and thin films. For instance, heteroepitaxy significantly impacts microelectronics and quantum optics, contributing to innovations like Light Emitting Diodes.

  • Silicon Carbide Substrate

    The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

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