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    The Semicorex SiC Coated Barrel Susceptor for Wafer Epitaxial is the perfect choice for single crystal growth applications, thanks to its exceptionally flat surface and high-quality SiC coating. Its high melting point, oxidation resistance, and corrosion resistance make it an ideal choice for use in high-temperature and corrosive environments.
  • Silicon Nitride Guide Roller

    Silicon Nitride Guide Roller

    Silicon Nitride Guide Roller by Semicorex represents a pinnacle in advanced ceramic engineering. This product offers a remarkable blend of mechanical, thermal, and electrical properties.**
  • AIN Substrate

    AIN Substrate

    Semicorex’s AIN Substrate excels in superior thermal management and electrical isolation, providing a robust solution crafted from high-purity AlN ceramics. This white ceramic material is lauded for its comprehensive properties.**
  • Graphite Electrode Rod

    Graphite Electrode Rod

    Semicorex Graphite Electrode Rods are high-purity graphite components used as core heating elements in vacuum furnaces. Choose Semicorex for unmatched material quality, precision machining, and reliable performance in high-temperature vacuum environments.*
  • PFA Wafer Cassettes

    PFA Wafer Cassettes

    Semicorex PFA Wafer Cassettes are high-purity carriers designed to ensure safe and contamination-free handling of semiconductor wafers during wet processing, storage, and transport. Choosing Semicorex guarantees not only superior PFA material quality but also precision engineering that delivers reliability, cleanliness, and long-term performance in advanced fabrication environments.*
  • Self-lubricating Bearings

    Self-lubricating Bearings

    Semicorex self-lubricating bearings are a type of bearing that combines the self-lubricating properties of graphite materials. They are widely used in industrial fields with high lubrication requirements and complex environmental conditions.
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    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

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    Semiconductor technology has been the backbone of modern civilization, fundamentally transforming the way we live, work, and interact with the world. It has enabled unprecedented advancements in various fields including information technology, energy, telecommunications, and healthcare. From the microprocessors that power our smartphones and computers, to the sensors in medical devices, and the power electronics in renewable energy systems, semiconductors are at the core of nearly every technological innovation of the past century.

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