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continue on to improve, to be sure product or service high quality in line with market and consumer standard prerequisites. Our firm has a high-quality assurance program are established for Graphite material properties,Porous graphite,Graphite foam,High-porosity graphite,Porous graphite sheets, We sincerely welcome domestic and foreign retailers who calls, letters inquiring, or to crops to barter, we'll supply you high-quality merchandise as well as the most enthusiastic company,We look forward in your go to and your cooperation.
Graphite material properties, We warmly welcome your patronage and will serve our clients both at home and abroad with items of superior quality and excellent service geared to the trend of further development as always. We believe you will benefit from our professionalism soon.

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  • Etching Carrier Holder for PSS Etching

    Etching Carrier Holder for PSS Etching

    Semicorex's Etching Carrier Holder for PSS Etching is engineered for the most demanding epitaxy equipment applications. Our ultra-pure graphite carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The SiC coated carrier has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • High-Temperature SiC Coating for Plasma Etch Chambers

    High-Temperature SiC Coating for Plasma Etch Chambers

    When it comes to wafer handling processes such as epitaxy and MOCVD, Semicorex's High-Temperature SiC Coating for Plasma Etch Chambers is the top choice. Our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance thanks to our fine SiC crystal coating.
  • Silicon Carbide Graphite Substrate MOCVD Susceptor

    Silicon Carbide Graphite Substrate MOCVD Susceptor

    Semicorex Silicon Carbide Graphite Substrate MOCVD Susceptor is the ultimate choice for semiconductor manufacturers looking for a high-quality carrier that can deliver superior performance and durability. Its advanced material ensures even thermal profile and laminar gas flow pattern, delivering high-quality wafers.
  • RTP Ring

    RTP Ring

    Semicorex RTP Ring is a SiC-coated graphite ring designed for high-performance applications in Rapid Thermal Processing (RTP) systems. Choose Semicorex for our advanced material technology, ensuring superior durability, precision, and reliability in semiconductor manufacturing.*
  • RTP SiC Coating Plates

    RTP SiC Coating Plates

    Semicorex RTP SiC Coating Plates are high-performance wafer carriers engineered for use in demanding Rapid Thermal Processing environments. Trusted by leading semiconductor manufacturers, Semicorex delivers superior thermal stability, durability, and contamination control backed by rigorous quality standards and precision manufacturing.*
  • SiC-coated planetary susceptors

    SiC-coated planetary susceptors

    Semicorex SiC-coated planetary susceptors are the high-precision graphite supporting components covered with a dense silicon carbide coating, specially engineered for the advanced MOCVD equipment. They can enable uniform gas flow and thermal distribution, thus contributing to creating an optimal epitaxial environment.
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  • Japan recently restricted exports of 23 types of semiconductor manufacturing equipment

    Japan recently restricted exports of 23 types of semiconductor manufacturing equipment. The announcement has sent ripples across the industry, as the move is expected to have a significant impact on global supply chains for semiconductor manufacturing.

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • TaC Coating

    According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

  • What is liquid phase epitaxy?

    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

  • Advantages and Disadvantages of Gallium Nitride (GaN) Applications

    As the world looks for new opportunities in semiconductors, gallium nitride continues to stand out as a potential candidate for future power and RF applications. However, for all the benefits it offers, it still faces a major challenge; there are no P-type (P-type) products. Why is GaN touted as the next major semiconductor material, why is the lack of P-type GaN devices a major drawback, and what does this mean for future designs?

  • Main steps in SiC substrate processing

    The processing of 4H-SiC substrate mainly includes the following steps:

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