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China High-porosity graphite Manufacturers, Suppliers, Factory

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    Semicorex Graphite Powder (99.999% purity, 1-5 µm particle size) is a high-performance material essential for semiconductor crystal growth, offering superior purity and stability. Semicorex ensures the highest quality standards, providing tailored solutions for advanced manufacturing.*
  • 8-inch P-type SiC Wafers

    8-inch P-type SiC Wafers

    Semicorex 8-inch P-type SiC wafers deliver outstanding performance for next-generation power, RF, and high-temperature devices. Choose Semicorex for superior crystalline quality, industry-leading uniformity, and trusted expertise in advanced SiC materials.*
  • 8-inch Quartz Thermos Bucket

    8-inch Quartz Thermos Bucket

    Semicorex 8-inch Quartz Thermos Bucket, a pinnacle of precision engineering tailored specifically for the semiconductor industry. Designed to safeguard and maintain the integrity of 8-inch wafers during transport and storage, this 8-inch Quartz thermos bucket combines cutting-edge materials with meticulous craftsmanship to meet the stringent demands of modern semiconductor fabrication facilities. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Carbide-Coated Reactor Barrel Susceptor

    Carbide-Coated Reactor Barrel Susceptor

    The Semicorex Carbide-Coated Reactor Barrel Susceptor is a premium quality graphite product coated with high-purity SiC, designed specifically for LPE processes. With excellent heat and corrosion resistance, this product is perfect for use in semiconductor manufacturing applications.
  • Plasma Processing Focus Ring

    Plasma Processing Focus Ring

    Semicorex Plasma processing focus ring is specially designed to meet the high demands of plasma etch processing in the semiconductor industry. Our advanced, high-purity Silicon Carbide Coated Components are built to withstand extreme environments and are suitable for use in various applications, including silicon carbide layers and epitaxy semiconductors.
  • SiC Ceramic Boats

    SiC Ceramic Boats

    Semicorex SiC ceramic boats provide the optimal combination of purity, strength, thermal resistance, and dimensional accuracy required for the rigorous demands of modern semiconductor wafer processing. *
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  • What is porous graphite?

    Porous graphite, also known as porous carbon or porous graphite material, is a graphite form that has been specially engineered to have an interconnected network of pores or voids within its structure.

  • Silicon Carbide Substrate Core Process Flow

    Silicon carbide substrate is a compound semiconductor single crystal material composed of two elements, carbon and silicon. It has the characteristics of large bandgap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.

  • Chip Manufacturing: Thin Film Processes

    The semiconductor thin film deposition process is an essential component of modern microelectronics technology. It involves constructing complex integrated circuits by depositing one or more thin layers of material on a semiconductor substrate.

  • Advantages of SiC in EV industry

    As a wide-bandgap (WBG) semiconductor material, SiC's wider energy difference gives it higher thermal and electronic properties compared to traditional Si. This feature enables power devices to operate at higher temperatures, frequencies and voltages.

  • Wafer manufacturing

    Wafers are essential raw materials for integrated circuits, power devices, and semiconductor discrete devices. Over 90% of integrated circuits are manufactured using high-purity, high-quality wafers. The quality and supply capacity of these wafers within the industry are directly linked to the overall performance and competitiveness of integrated circuits. In this discussion, we will introduce the wafer manufacturing process in detail.

  • LPE is the important method for preparing P-type 4H-SiC single crystal and 3C-SiC single crystal

    As a third-generation wide bandgap semiconductor material, SiC (silicon carbide) has excellent physical and electrical properties, which makes it have broad application prospects in the field of power semiconductor devices.

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