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Our company insists all along the quality policy of "product good quality is base of enterprise survival; buyer fulfillment will be the staring point and ending of an company; persistent improvement is eternal pursuit of staff" and also the consistent purpose of "reputation very first, shopper first" for ESC;E-chuck,Electrostatic Chuck,ESC chuck,wafer chuck,ceramic components, We glance ahead to receiving your enquires quickly and hope to have the chance to operate together with you inside the future. Welcome to just take a seem at our organization.
ESC;E-chuck, Wide selection and fast delivery to suit your needs! Our philosophy: Good quality, great service, keep improving. We are looking forward that more and more oversea friends join in our family for further development near the future!

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  • ICP Etching Carrier Plate

    ICP Etching Carrier Plate

    Semicorex's ICP Etching Carrier Plate is the perfect solution for demanding wafer handling and thin film deposition processes. Our product provides superior heat and corrosion resistance, even thermal uniformity, and laminar gas flow patterns. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • Inductively-Coupled Plasma (ICP)

    Inductively-Coupled Plasma (ICP)

    Semicorex's silicon carbide coated susceptor for Inductively-Coupled Plasma (ICP) is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • Spare Parts in Epitaxial Growth

    Spare Parts in Epitaxial Growth

    Semicorex Spare Parts in Epitaxial Growth are crucial components utilized within epitaxial growth systems, particularly in processes involving quartz tube setups. These parts play a vital role in facilitating gas flow to drive tray base rotation and ensure precise temperature control throughout the epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Tantalum Carbide Coated Susceptor

    Tantalum Carbide Coated Susceptor

    Semicorex Tantalum Carbide Coated Susceptor is a critical component, playing a pivotal role in deposition processes essential for creating semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Tantalum Carbide Halfmoon Part

    Tantalum Carbide Halfmoon Part

    Semicorex Tantalum Carbide Halfmoon Part is a crucial component utilized in the semiconductor epitaxy process, a critical stage in the manufacturing of semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Silicon Carbide Tray

    Silicon Carbide Tray

    Semicorex Silicon Carbide Tray is built to withstand extreme conditions while ensuring remarkable performance. It plays a crucial role in the ICP etching process, semiconductor diffusion, and the MOCVD epitaxial process.
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  • What is CVD for SiC

  • TaC Coating

    According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • What is quartz?

    Quartz (SiO₂) material is very similar to glass at first glance, but the special thing is that the general glass is made up of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while the quartz contains only SiO₂ components, and the microstructure of its silicon dioxide tetrahedral structural units composed of a simple network.

  • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

    In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

  • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

    Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

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