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    PBN Crucibles

    Semicorex PBN Crucibles are ultra-high purity, chemically inert containers ideal for high-temperature and vacuum applications. Choose Semicorex for unmatched material quality, precision engineering, and expert support trusted by industry leaders worldwide.*
  • Ceramic Mechanical Seal

    Ceramic Mechanical Seal

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Ceramic in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our Ceramic Mechanical Seal has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Graphite Heating Elements

    Graphite Heating Elements

    Semicorex Graphite Heating Elements have become essential components in semiconductor manufacturing, enabling the precise and controlled thermal environments required for advanced wafer processing. Their unique combination of material properties, design flexibility, and performance advantages makes them ideal for meeting the stringent demands of next-generation semiconductor device fabrication. We at Semicorex are dedicated to manufacturing and supplying high-performance Graphite Heating Elements that fuse quality with cost-efficiency.**
  • Alumina Tube

    Alumina Tube

    Semicorex Alumina Tube is a pivotal component in a variety of industrial applications, renowned for its ability to withstand harsh environments and high temperatures.**
  • MOCVD 3x2’’ Susceptor

    MOCVD 3x2’’ Susceptor

    Semicorex MOCVD 3x2’’ Susceptor developed by Semicorex represents a pinnacle of innovation and engineering excellence, specifically tailored to meet the intricate demands of contemporary semiconductor manufacturing processes.**
  • Silicon Carbide Epitaxy Susceptor

    Silicon Carbide Epitaxy Susceptor

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Epitaxy Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Related Blog
  • Reviews

  • What is Electrostatic Chuck(ESC)?

    In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process.

  • What is cantilever paddles?

    The wafer boats, loaded with a batch of wafers to be processed, are positioned on long cantilevered paddles.

  • Silicon Carbide Ceramics and Their Diverse Fabrication Processes

    This paper provides a comprehensive overview of the various manufacturing techniques employed to produce dense SiC ceramics, highlighting their unique characteristics and applications.

  • Doping Technology of FZ Silicon

    Silicon is a semiconductor material. In the absence of impurities, its own electrical conductivity is very weak. Impurities and crystal defects within the crystal are the main factors affecting its electrical properties.

  • Czochralski method

    Wafers are sliced from crystal rods, which are produced from polycrystalline and pure undoped intrinsic materials. The process of transforming polycrystalline material into single crystals through melting and recrystallization is known as crystal growth. Currently, two main methods are employed for this process: the Czochralski method and the zone melting method. Among these, the Czochralski method (often referred to as the CZ method) is the most significant for growing single crystals from melts. In fact, over 85% of single crystal silicon is produced using the Czochralski method.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

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