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China ultra pure graphite Manufacturers, Suppliers, Factory

Innovation, excellent and reliability are the core values of our company. These principles today much more than ever form the basis of our success as an internationally active mid-size business for ultra pure graphite,thin film deposition,sic coated graphite,epitaxial growth,oxide mbe, If you are looking for Good Quality at a good price and timely delivery. Do contact us.
ultra pure graphite, Our main objectives are to provide our customers worldwide with good quality, competitive price, satisfied delivery and excellent services. Customer satisfaction is our main goal. We welcome you to visit our showroom and office. We're looking forward to establish business relation with you.

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    TaC Tantalum Carbide Coated Plate

    Semicorex TaC Tantalum Carbide Coated Plate is a cutting-edge solution designed to meet the stringent demands of semiconductor manufacturing, particularly in the epitaxial (epi) processing stage. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Wafer

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    Semicorex silicon wafer is a thin, circular slice of silicon crystal used in the fabrication of integrated circuits and other microdevices. Typically, these wafers are produced through a meticulous process involving growing a single crystal ingot of high-purity silicon and then precisely slicing it into thin discs. Silicon wafers serve as the fundamental substrate upon which semiconductor devices are built. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Fine Powder

    SiC Fine Powder

    Semicorex SiC Fine Powder is a high-quality, ultra-fine powder known for its exceptional purity and controlled particle size distribution. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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    Silicon carbide (SiC) power devices are semiconductor devices made of silicon carbide materials, mainly used in high-frequency, high-temperature, high-voltage and high-power electronic applications. Compared with traditional silicon (Si)-based power devices, silicon carbide power devices have higher bandgap width, higher critical breakdown electric field, higher thermal conductivity and higher saturated electron drift velocity, which makes them have great development potential and application value in the field of power electronics.

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