China ultra pure graphite Manufacturers, Suppliers, Factory

Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

Graphite is vital in producing Silicon Carbide (SiC) semiconductors, known for their exceptional thermal and electrical properties. This makes SiC ideal for high-power, high-temperature, and high-frequency applications. In SiC semiconductor manufacturing, graphite is commonly used for crucibles, heaters, and other high-temperature processing components due to its excellent thermal conductivity, chemical stability, and resistance to thermal shock.

Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.

Silicon is the second most abundant element on Earth after oxygen. Most silicon is found in soil, rocks, natural water, trees, and plants.

The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.