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We are experienced manufacturer. Wining the majority of the crucial certifications of its market for ceramic film,Electrostatic Chuck,ESC;E-chuck,ESC chuck,wafer chuck, We welcome consumers, business enterprise associations and friends from all elements of your world to get in touch with us and look for cooperation for mutual rewards.
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  • Isostatic Graphite Crucible

    Isostatic Graphite Crucible

    Semicorex Isostatic Graphite Crucible is a specialized vessel used in the thermal processing of semiconductor materials, particularly in the production of monocrystals. It plays a crucial role in the controlled growth of single-crystal structures essential for semiconductor device fabrication. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Alumina Ceramic Vacuum Chuck

    Alumina Ceramic Vacuum Chuck

    Semicorex Alumina Ceramic Vacuum Chuck is applied in the wafer thinning and grinding processes of semiconductor manufacturing, serving as an indispensable tool for achieving high-precision and reliable semiconductor production.**
  • SiC Seal Ring

    SiC Seal Ring

    Semicorex provide high-quality SiC seal ring with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC-Coated Barrel Susceptor

    SiC-Coated Barrel Susceptor

    With its high melting point, oxidation resistance, and corrosion resistance, the Semicorex SiC-Coated Barrel Susceptor is the perfect choice for use in single crystal growth applications. Its silicon carbide coating provides exceptional flatness and heat distribution properties, ensuring reliable and consistent performance in even the most demanding high-temperature environments.
  • SiC Heater Silicon Carbide Heating Elements

    SiC Heater Silicon Carbide Heating Elements

    Semicorex SiC Heater Silicon Carbide Heating Elements, is a specialized tool used in the handling and processing of semiconductor wafers. This crucial piece of equipment plays a pivotal role in creating the optimal thermal environment necessary for the production of high-quality semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Carbide Bushing

    Silicon Carbide Bushing

    Perfect for next-generation lithography and wafer-handling applications, Semicorex ultra-pure Silicon Carbide Bushing ensure minimal contamination and provide exceptionally long life performance. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
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  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • Silicon Carbide Substrate

    The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

  • How is Silicon Carbide Manufactured?

  • Knowing GaN

    Recently, the semiconductor industry has continued to pay increasing attention to Gallium Nitride (GaN) technology. Due to its excellent electronic properties, Gallium Nitride devices have important applications in many high-tech fields:

  • SiGe and Si Selective Etching Technology

    A critical step in the fabrication of n-type GAAFETs involves the high-selectivity etching of SiGe:Si stacks prior to the deposition of inner spacers, generating silicon nanosheets and releasing channels.

  • Monocrystalline Silicon Manufacturing

    The three primary methods used in monocrystalline silicon manufacturing are the Czochralski (CZ) method, the Kyropoulos method, and the Float Zone (FZ) method.

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