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  • SiC Wafer Boat

    SiC Wafer Boat

    Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our SiC Wafer Boat has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Silicon Carbide Boats

    Silicon Carbide Boats

    Semicorex Silicon Carbide Boats are high-performance wafer carriers designed for semiconductor oxidation and diffusion processes. These precision-engineered components provide a stable, high-purity environment for silicon wafers inside furnace tubes, ensuring optimal process reliability and efficiency. *
  • Semiconductor Quartz Tank

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    Semicorex Semiconductor Quartz Tank stands as an indispensable component within the realm of semiconductor processing, serving as a meticulously engineered vessel designed to facilitate the cleaning and treatment of delicate wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Wafer Boat Carrier

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    Semicorex Wafer Boat Carrier stands as a pinnacle of innovation in the realm of semiconductor processing. Crafted meticulously from graphite and fortified with a cutting-edge coating of Chemical Vapor Deposition (CVD) Silicon Carbide (SiC), this carrier exemplifies precision engineering and advanced materials science. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Quartz Fin Pedestal

    Quartz Fin Pedestal

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    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

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