English
Home > Products > Carbon fiber composite heat-insulation materials

China Carbon fiber composite heat-insulation materials Manufacturers, Suppliers, Factory

Our pursuit and company goal is to "Always satisfy our customer requirements". We continue to develop and design superior quality products for both our old and new customers and achieve a win-win prospect for our clients as well as us for Carbon fiber composite heat-insulation materials,CFC,CFRC,C/C Components,Carbon-Carbon Components, For more information and facts, you should never wait to make contact with us. All inquiries from you may be highly appreciated.
Carbon fiber composite heat-insulation materials, We have been your reliable partner in international markets with the best quality items. Our advantages are innovation, flexibility and reliability which have been built during the last twenty years. We focus on providing service for our clients as a key element in strengthening our long-term relationships. Our continual availability of high grade products in combination with our excellent pre-sales and after-sales service ensures strong competitiveness in an increasingly globalized market.

Related Products

Hot Products

  • Barrel Susceptor Silicon Carbide Coated Graphite

    Barrel Susceptor Silicon Carbide Coated Graphite

    Semicorex Barrel Susceptor Silicon Carbide Coated Graphite is a specialized component designed for use in the epitaxy process, particularly in carrying wafers. Contact us today to learn more about how we can help you with your semiconductor wafer processing needs.
  • Susceptor Disc

    Susceptor Disc

    The Semicorex Susceptor Disc is an indispensable tool in Metal-Organic Chemical Vapor Deposition (MOCVD), specifically engineered for supporting and heating semiconductor wafers during the critical process of epitaxial layer deposition. The Susceptor Disc is instrumental in the manufacturing of semiconductor devices, where precise layer growth is paramount. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • TaC Coated Ring

    TaC Coated Ring

    Semicorex TaC Coated Ring stands as a critical component that meets these demanding requirements. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Silicon Carbide Tray

    Silicon Carbide Tray

    Semicorex Silicon Carbide Tray is built to withstand extreme conditions while ensuring remarkable performance. It plays a crucial role in the ICP etching process, semiconductor diffusion, and the MOCVD epitaxial process.
  • RTP Ring

    RTP Ring

    Semicorex RTP Ring is a SiC-coated graphite ring designed for high-performance applications in Rapid Thermal Processing (RTP) systems. Choose Semicorex for our advanced material technology, ensuring superior durability, precision, and reliability in semiconductor manufacturing.*
  • SiC Arm

    SiC Arm

    Semicorex SiC Arm is a high-purity silicon carbide component designed for precise wafer handling and positioning in semiconductor manufacturing. Choosing Semicorex ensures unmatched material reliability, chemical resistance, and precision engineering that support the most demanding semiconductor processes.*
  • Related Blog
  • Reviews

  • What is the process of SiC epitaxial?

    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

  • What are the challenges of silicon carbide substrate production?

    Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

  • Application and Development Challenges of TaC Coated Graphite Components

    The third-generation wide bandgap semiconductor materials, such as Gallium Nitride (GaN) and Silicon Carbide (SiC), are renowned for their exceptional optoelectronic conversion and microwave signal transmission capabilities. These materials meet the demanding requirements of high-frequency, high-temperature, high-power, and radiation-resistant electronic devices. Therefore, they have vast application prospects in new-generation mobile communications, new energy vehicles, smart grids, and LED technologies. The comprehensive development of the third-generation semiconductor industry urgently requires breakthroughs in key core technologies, continual advancement in device design and innovation, and a resolution to import dependencies.

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • Introduction to Silicon Carbide Power Devices

    Silicon carbide (SiC) power devices are semiconductor devices made of silicon carbide materials, mainly used in high-frequency, high-temperature, high-voltage and high-power electronic applications. Compared with traditional silicon (Si)-based power devices, silicon carbide power devices have higher bandgap width, higher critical breakdown electric field, higher thermal conductivity and higher saturated electron drift velocity, which makes them have great development potential and application value in the field of power electronics.

  • What is Dummy Wafer

    A Dummy Wafer is a specialized wafer utilized primarily to fill machine equipment during the wafer manufacturing process.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept