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    Semicorex provides custom thin film (silicon carbide) SiC epitaxy on substrates for the development of silicon carbide devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Barrel Susceptor Silicon Carbide Coated Graphite

    Barrel Susceptor Silicon Carbide Coated Graphite

    Semicorex Barrel Susceptor Silicon Carbide Coated Graphite is a specialized component designed for use in the epitaxy process, particularly in carrying wafers. Contact us today to learn more about how we can help you with your semiconductor wafer processing needs.
  • 30mm Aluminum Nitride Wafer Substrate

    30mm Aluminum Nitride Wafer Substrate

    The unique attributes of Semicorex 30mm Aluminum Nitride Wafer Substrate make it an ideal substrate for ultraviolet (UV) LEDs, UV detectors, UV lasers, and the next generation of 5G high-power/high-frequency RF devices. In wireless communications, 30mm Aluminum Nitride Wafer Substrate’s properties facilitate the development of devices capable of handling the high power and frequencies essential for 5G technologies, enhancing signal transmission and reception. Furthermore, in fields like healthcare and military, AlN-based devices are employed in medical phototherapy for treating skin conditions, drug discovery through photodynamic therapies, and secure communication technologies in aerospace, underscoring 30mm Aluminum Nitride Wafer Substrate’s versatility and critical role in technological advancements across diverse sectors.
  • High Purity Quartz Bell Jar

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    Designed to offer unparalleled performance in extreme conditions, Semicorex High Purity Quartz Bell Jar combines exceptional material properties to meet the stringent demands of semiconductor manufacturing.**
  • Glassy Carbon Coating Felt

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    Semicorex Glassy Carbon Coating Felt is a premium-grade insulation material designed to deliver exceptional thermal performance and process cleanliness in SiC epitaxial growth systems. Choose Semicorex for unmatched expertise in engineered carbon solutions, consistent product quality, and a deep commitment to supporting next-generation semiconductor manufacturing.*
  • SiC Edge Ring

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  • What is P-type SiC wafer?

    A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

  • About Semiconductor Heating Elements

    Heat treatment is one of the essential and important processes in the semiconductor process. Thermal process is the process of applying thermal energy to a wafer by placing it in an environment filled with a specific gas, including oxidation/diffusion/annealing, etc.

  • Thermal field insulation material

    The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

  • Applications of TaC Coated Graphite Components

    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

  • SiC Ceramics: The Indispensable Material for High-Precision Components in Semiconductor Manufacturing

    Semiconductor manufacturing, the cornerstone of modern technological advancement, is in constant pursuit of smaller, faster, and more efficient integrated circuits. This relentless pursuit drives the need for increasingly precise and sophisticated manufacturing processes, where each step relies heavily on high-performance, high-quality, and high-precision equipment. Silicon carbide (SiC), a high-performance structural ceramic material, plays a crucial role in this demanding environment.

  • Application of carbon fiber composite

    Carbon fiber (CF) is a type of fibrous material that contains over 95% carbon.

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