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  • CVD SiC Ring

    CVD SiC Ring

    Semicorex CVD SiC Ring stands as an essential component within the intricate landscape of semiconductor manufacturing, specifically designed to play a crucial role in the etching process. Crafted with precision and innovation, this ring is exclusively fashioned from Chemical Vapor Deposition Silicon Carbide (CVD SiC), exemplifying a material known for its exceptional properties in the demanding semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Epi Wafers

    SiC Epi Wafers

    Semicorex SiC epi wafers are becoming a key material for promoting technological innovation in high-frequency, high-temperature, and high-power application scenarios due to their excellent physical properties. Semicorex SiC Epi Wafers use industry-leading epitaxial growth technology and are designed to meet the high-end needs of new energy vehicles, 5G communications, renewable energy, and industrial power supplies, providing customers with high-performance, high-reliability core semiconductor solutions.*
  • Wafer Carrier Semiconductor

    Wafer Carrier Semiconductor

    Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components focusing on silicon carbide layers in semiconductor industries. We have been manufacturer and supplier of Wafer Carrier Semiconductor for many years. Our Wafer Carrier Semiconductor has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Al2O3 Cutting Blade

    Al2O3 Cutting Blade

    Semicorex Al2O3 Cutting Blade,has been meticulously engineered to meet the rigorous demands of cutting processes across a spectrum of industries, including but not limited to film and foil, medical applications, and the intricate assembly of electronic components.**
  • GaN-on-SiC Substrate

    GaN-on-SiC Substrate

    Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our GaN-on-SiC Substrate susceptors have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Coated Barrel Susceptor

    SiC Coated Barrel Susceptor

    Semicorex is a large-scale manufacturer and supplier of SiC Coated Barrel Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Related Blog
  • Reviews

  • Advantages of Silicon Carbide Ceramics in the Optical Fiber Industry

    Silicon carbide ceramics offer numerous advantages in the optical fiber industry, including high-temperature stability, low thermal expansion coefficient, low loss and damage threshold, mechanical strength, corrosion resistance, good thermal conductivity, and low dielectric constant. These properties make SiC ceramics an ideal material for fiber optic sensors, lasers, and high-power optical fiber applications. As demand in the optical fiber field increases, the application prospects for silicon carbide ceramics will become increasingly prominent.

  • Released 850V High Power GaN HEMT Epitaxial Products

    In November 2023, Semicorex released 850V GaN-on-Si epitaxial products for high-voltage, high-current HEMT power device applications. Compared to other substrates for HMET power devices, GaN-on-Si enables larger wafer sizes and more diversified applications, and it can also be quickly introduced into the mainstream silicon chip process in fabs, which is a unique advantage for improving the yield of power devices.

  • Introduction to Third-Generation Semiconductors: GaN and Related Epitaxial Technologies

    GaN materials gained prominence following the awarding of the 2014 Nobel Prize in Physics for blue LEDs. Initially entering the public eye through fast-charging applications in consumer electronics, GaN-based power amplifiers and RF devices have also quietly emerged as critical components in 5G base stations. In recent years, GaN-based automotive-grade power devices have shown promise, potentially opening new growth avenues for GaN material applications.

  • What is SiC epitaxy?

    Silicon Carbide (SiC) epitaxy is a key technology in the field of semiconductors, particularly for the development of high-power electronic devices. SiC is a compound semiconductor with a wide bandgap, which makes it ideal for applications that require a high-temperature and high-voltage operation.

  • Silicon Carbide Ceramic Membrane: a new separation membrane that is expected to replace various inorganic membranes

    Silicon carbide ceramic membranes have the characteristics of high chemical stability, good thermal shock resistance, strong hydrophilicity, large membrane flux, high mechanical strength, concentrated pore size distribution, and good pore structure gradient.

  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

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