China alumina 99.5 Manufacturers, Suppliers, Factory

Currently, many semiconductor devices employ mesa device structures, which are predominantly created through two types of etching: wet etching and dry etching. While the simple and rapid wet etching plays a significant role in semiconductor device fabrication, it has inherent drawbacks such as isotropic etching and poor uniformity, which result in limited control when transferring small-sized patterns. Dry etching, however, with its high anisotropy, good uniformity, and repeatability, has become prominent in semiconductor device fabrication processes. The term “dry etching” broadly refers to any non-wet etching technology used for removing surface materials and transferring micro and nano patterns, including laser etching, plasma etching, and chemical vapor etching. The dry etching discussed in this text specifically pertains to the narrow application of processes using plasma discharge—either physical or chemical—to modify material surfaces.

Aluminum Nitride (AlN) ceramic heater for semiconductor is a device used to heat semiconductor materials.

The third generation of wide bandgap semiconductor materials, including gallium nitride (GaN), silicon carbide (SiC), and aluminum nitride (AlN), exhibit excellent electrical, thermal, and acousto-optical properties. These materials address the limitations of the first and second generation of semiconductor materials, significantly advancing the semiconductor industry.

Today, Onsemi announced on its official website that it has reached an agreement with Qorvo to acquire the SiC JFET technology business and Qorvo's subsidiary.

Annealing after ion implantation is a key step in semiconductor device manufacturing, which affects the performance and reliability of the device.

This article delves into the usage and future trajectory of silicon carbide (SiC) boats in relation to quartz boats within the semiconductor industry, specifically focusing on their applications in solar cell manufacturing.