English
Home > Products > aixtron g5

China aixtron g5 Manufacturers, Suppliers, Factory

Our intention would be to provide top quality products and solutions at competitive charges, and top-notch support to customers around the world. We have been ISO9001, CE, and GS certified and strictly adhere to their quality specifications for aixtron g5,mocvd reactor,cvd mocvd,waferholder,wafer susceptor, Our organization has been devoting that "customer first" and committed to helping clients expand their small business, so that they become the Big Boss !
aixtron g5, We have been seeking the chances to meet all the friends from both at home and abroad for the win-win cooperation. We sincerely hope to have long-term cooperation with all of you on the bases of mutual benefit and common development.

Related Products

Hot Products

  • Insulation Covers

    Insulation Covers

    Semicorex Insulation Covers are critical thermal management component designed for optimal performance in LPE furnaces, utilizing high-strength rigid felt material to ensure consistent epitaxial growth conditions. Choose Semicorex for our proven expertise in delivering precision-engineered, high-purity furnace components that enhance process stability, yield, and equipment longevity.*
  • SiC Coated Barrel Susceptor for LPE Epitaxial Growth

    SiC Coated Barrel Susceptor for LPE Epitaxial Growth

    Semicorex SiC Coated Barrel Susceptor for LPE Epitaxial Growth is a high-performance product designed to provide consistent and reliable performance over an extended period. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for the growth of high-quality epitaxial layers on wafer chips. Its customizability and cost-effectiveness make it a highly competitive product in the market.
  • SiC Coated Graphite Barrel Susceptor

    SiC Coated Graphite Barrel Susceptor

    If you're looking for a high-performance graphite susceptor for use in semiconductor manufacturing applications, the Semicorex SiC Coated Graphite Barrel Susceptor is the ideal choice. Its exceptional thermal conductivity and heat distribution properties make it the go-to choice for reliable and consistent performance in high-temperature and corrosive environments.
  • Inductively-Coupled Plasma (ICP)

    Inductively-Coupled Plasma (ICP)

    Semicorex's silicon carbide coated susceptor for Inductively-Coupled Plasma (ICP) is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • SiC Sealing Part

    SiC Sealing Part

    Semicorex SiC Sealing Part offers a blend of exceptional hardness, chemical resistance, and thermal stability, making it significant for demanding industrial applications. The advanced characteristics of SiC Sealing Part ensure durability, reliability, and efficiency, thereby enhancing the performance and longevity of the components.**
  • 8-inch P-type SiC Wafers

    8-inch P-type SiC Wafers

    Semicorex 8-inch P-type SiC wafers deliver outstanding performance for next-generation power, RF, and high-temperature devices. Choose Semicorex for superior crystalline quality, industry-leading uniformity, and trusted expertise in advanced SiC materials.*
  • Related Blog
  • Reviews

  • The Impact of Temperature on CVD-SiC Coatings

    Chemical Vapor Deposition (CVD) is a versatile technique for producing high-quality coatings with various applications in industries such as aerospace, electronics, and materials science. CVD-SiC coatings are known for their exceptional properties, including high temperature resistance, mechanical strength, and excellent corrosion resistance.

  • Silicon Carbide Heating Elements

    In the world of high-temperature heating, achieving precision and reliability in extreme conditions is paramount. To meet these challenges, innovative materials and designs have been developed to push the boundaries of what's possible. One such advancement is the Silicon Carbide (SiC) coated graphite heating element.

  • What is liquid phase epitaxy?

    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

  • SiC Epitaxy

    There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

  • Photovoltaic Industry Development Overview

    By 2027, solar photovoltaic (PV) will overtake coal as the world's largest installed capacity. The cumulative installed capacity of solar PV nearly triples in our forecast, growing by nearly 1,500 gigawatts over this period, and will surpass natural gas by 2026 and coal by 2027.

  • Defect Detection in Silicon Carbide Wafer Processing

    SiC substrates are the most crucial component in the silicon carbide industry, accounting for nearly 50% of its value. Without SiC substrates, it is impossible to manufacture SiC devices, making them the essential material foundation.

Related Search

Aixtron G5Aixtron G5+

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept