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  • Porous Ceramic Chuck

    Porous Ceramic Chuck

    Semicorex Porous Ceramic Chuck (Vacuum Chuck) is a high-precision tool designed to securely hold wafers during semiconductor manufacturing processes. By choosing Semicorex, you benefit from a solution that offers exceptional performance, durability, and customization options, ensuring enhanced production efficiency and consistent quality standards.*
  • Alumina Ceramic Robotic Arm

    Alumina Ceramic Robotic Arm

    Semicorex Alumina Ceramic Robotic Arm, also known as wafer handling ceramic robotic arm or ceramic silicon wafer handling fork, is a high-performance semiconductor equipment component. Its design takes into account the stringent requirements of semiconductor manufacturing. With its high temperature resistance, wear resistance, chemical stability, and excellent electrical insulation properties, the alumina ceramic arm plays an irreplaceable role in the global semiconductor manufacturing industry. We at Semicorex are dedicated to manufacturing and supplying high-performance Alumina Ceramic Robotic Arm that fuse quality with cost-efficiency.**
  • RTP Carrier for MOCVD Epitaxial Growth

    RTP Carrier for MOCVD Epitaxial Growth

    Semicorex RTP Carrier for MOCVD Epitaxial Growth is ideal for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Carbon graphite susceptors and quartz crucibles are processed by MOCVD on the surface of graphite, ceramics, etc. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Isostatic Graphite Crucibles for Melting

    Isostatic Graphite Crucibles for Melting

    Semicorex Isostatic Graphite Crucibles for Melting are produced using isostatic pressing techniques, which enhance their material density and mechanical properties. This results in a vessel that not only withstands the extreme temperatures and corrosive environments typical of semiconductor processing but also offers long-term durability. The crucibles’ robustness ensures they can handle repeated thermal cycling without degradation, thereby providing consistent performance over extended operational periods. We at Semicorex are dedicated to manufacturing and supplying high-performance Isostatic Graphite Crucibles for Melting that fuse quality with cost-efficiency.
  • TaC Coating Plate

    TaC Coating Plate

    Semicorex TaC Coating Plate stands out as a high-performance component for demanding epitaxial growth process and further semiconductor manufacturing environments.With its series of superior properties,it can ultimately enhance the productivity and cost-effectiveness of advanced semiconductor fabrication processes.**
  • SiC Susceptor for MOCVD

    SiC Susceptor for MOCVD

    Semicorex is a leading manufacturer and supplier of SiC Susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
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  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • Conductive Coated Graphite Heaters

    The conductive coated graphite heater is a new product designed for high temperature semiconductor processing and other vacuum thermal systems.

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • How is Silicon Carbide Manufactured?

  • Application of GaN

    There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.

  • What is a SiC Boat, and What are its Various Manufacturing Processes?

    A SiC boat, short for silicon carbide boat, is a high-temperature-resistant accessory used in furnace tubes to carry wafers during high-temperature processing. Due to the outstanding properties of silicon carbide such as resistance to high temperatures, chemical corrosion, and excellent thermal stability, SiC boats are extensively utilized in various thermal treatment processes including diffusion, oxidation, Chemical Vapor Deposition (CVD), and annealing.

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