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    The Semicorex Carbide-Coated Reactor Barrel Susceptor is a premium quality graphite product coated with high-purity SiC, designed specifically for LPE processes. With excellent heat and corrosion resistance, this product is perfect for use in semiconductor manufacturing applications.
  • SiC Coated Barrel Susceptor for LPE Epitaxial Growth

    SiC Coated Barrel Susceptor for LPE Epitaxial Growth

    Semicorex SiC Coated Barrel Susceptor for LPE Epitaxial Growth is a high-performance product designed to provide consistent and reliable performance over an extended period. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for the growth of high-quality epitaxial layers on wafer chips. Its customizability and cost-effectiveness make it a highly competitive product in the market.
  • MOCVD Vacuum Chamber Lid

    MOCVD Vacuum Chamber Lid

    MOCVD Vacuum Chamber Lid used in crystal growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex Silicon Carbide Coated MOCVD Vacuum Chamber Lid engineered specifically stand up to these challenging environments. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Alumina Vacuum Chuck

    Alumina Vacuum Chuck

    Semicorex Alumina Vacuum Chuck is a precision holding device designed for advanced manufacturing and research applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Tantalum Carbide Part

    Tantalum Carbide Part

    Semicorex Tantalum Carbide Part is a TaC-coated graphite component designed for high-performance use in silicon carbide (SiC) crystal growth applications, offering excellent temperature and chemical resistance. Choose Semicorex for reliable, high-quality components that enhance crystal quality and production efficiency in semiconductor manufacturing.*
  • 12-inch Semi-Insulating SiC Substrates

    12-inch Semi-Insulating SiC Substrates

    Semicorex 12-inch Semi-Insulating SiC Substrates are next-generation material designed for high-frequency, high-power, and high-reliability semiconductor applications. Choosing Semicorex means partnering with a trusted leader in SiC innovation, committed to delivering exceptional quality, precision engineering, and customized solutions to empower your most advanced device technologies.*
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  • Why choose liquid phase epitaxy method?

    Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • Understanding the Complete Semiconductor Device Fabrication Process

    The fabrication of semiconductor devices primarily encompasses four types of processes: (1) Photolithography (2) Doping Techniques (3) Film Deposition (4) Etching Techniques The specific techniques involved include photolithography, ion implantation, rapid thermal processing (RTP), plasma-enhanced chemical vapor deposition (PECVD), sputtering, and both dry and wet etching methods.

  • The unit in semiconductor: Angstrom

    As a unit of length, Angstrom (Å) is ubiquitous in integrated circuit manufacturing. From precise control of material thickness to miniaturization and optimization of device size, the understanding and application of Angstrom scale is the core to ensure the continuous development of semiconductor technology.

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