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  • GaN-on-SiC Substrate

    GaN-on-SiC Substrate

    Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our GaN-on-SiC Substrate susceptors have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Hard Composite Carbon Fiber Felt

    Hard Composite Carbon Fiber Felt

    Semicorex provides Hard Composite Carbon Fiber Felt, a rigid insulation material based on carbon fibers. We have been manufacturer and supplier of graphite materials for many years. Our High Purity Graphite Rigid Felt has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Tantalum Carbide Coated Graphite Susceptor

    Tantalum Carbide Coated Graphite Susceptor

    Semicorex provides Tantalum Carbide Coated Graphite Susceptor with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Aluminum Nitride Insulator Rings

    Aluminum Nitride Insulator Rings

    Semicorex Aluminum Nitride Insulator Rings are indispensable components in advanced semiconductor manufacturing, particularly in high-frequency heat treatment processes. Their unique combination of high-temperature stability, superior sealing properties, exceptional thermal conductivity, and inherent durability makes them essential for ensuring precise process control, high device yields, and extended equipment lifespan in the demanding environment of semiconductor fabrication. We at Semicorex are dedicated to manufacturing and supplying high-performance Aluminum Nitride Insulator Rings that fuse quality with cost-efficiency.**
  • Gas Distribution Plates

    Gas Distribution Plates

    Semicorex Gas Distribution Plates, made of CVD SiC is a critical component in plasma etching systems, designed to ensure uniform gas dispersion and consistent plasma performance across the wafer. Semicorex is the trusted choice for high-performance ceramic solutions, offering unmatched material purity, engineering precision, and dependable support tailored to the demands of advanced semiconductor manufacturing.*
  • SiC wafer Grinding Plate

    SiC wafer Grinding Plate

    Advanced SiC wafer grinding plate from Semicorex is the precision machining part for achieving ultra-high flatness on semiconductor wafer surfaces. Selecting Semicorex SiC wafer grinding plate goes beyond selecting a high-performance tool, it secures the optimal, accurate, stable and efficient solution for wafer grinding applications.
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  • Semicorex Announces 8-Inch SiC Epitaxial Wafer

  • GaN Industry Applications

    The application areas of SiC-based and Si-based GaN are not strictly separated. In GaN-On-SiC devices, the cost of SiC substrate is relatively high, and with the growing maturity of SiC long crystal technology, the cost of the device is expected to fall further, and it is used in power devices in the field of power electronics.

  • What is quartz?

    Quartz (SiO₂) material is very similar to glass at first glance, but the special thing is that the general glass is made up of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while the quartz contains only SiO₂ components, and the microstructure of its silicon dioxide tetrahedral structural units composed of a simple network.

  • Difficulties in GaN preparation

    As a third-generation semiconductor material, Gallium Nitride is often compared with Silicon Carbide. Gallium Nitride still demonstrates its superiority with its large bandgap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity and strong radiation resistance. But it is undeniable that, like Silicon Carbide, Gallium Nitride also has various technical difficulties.

  • Silicon Carbide Wafer Epitaxy Technology

    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

  • What is the Difference Between Graphitization and Carbonization

    In conclusion, both graphitization and carbonization are industrial processes that involve carbon either as a reactant or a product. Carbonization refers to the process of converting organic matter into carbon, while graphitization involves transforming carbon into graphite. Therefore, carbonization is classified as a chemical change, whereas graphitization is recognized as a microstructural change.

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