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Our purpose would be to give good quality items at competitive rates, and top-notch service to consumers around the world. We are ISO9001, CE, and GS certified and strictly adhere to their quality specifications for single crystalline,crystal pulling,silicon single crystal,single crystalline silicon,sapphire crystal growth, Never-ending improvement and striving for 0% deficiency are our two main quality policies. Should you need anything, never hesitate to get in touch with us.
single crystalline, We set a strict quality control system. We have return and exchange policy, and you can exchange within 7 days after receive the wigs if it is in new station and we service repairing free for our products. Remember to feel free to contact us for further information and we will provide you competitive price list then.

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    The Semicorex SiC Coated Epitaxial Reactor Barrel is a top-quality graphite product coated with high-purity SiC. Its excellent density and thermal conductivity make it an ideal choice for use in LPE processes, providing exceptional heat distribution and protection in corrosive and high-temperature environments.
  • High-Temperature SiC Coating for Plasma Etch Chambers

    High-Temperature SiC Coating for Plasma Etch Chambers

    When it comes to wafer handling processes such as epitaxy and MOCVD, Semicorex's High-Temperature SiC Coating for Plasma Etch Chambers is the top choice. Our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance thanks to our fine SiC crystal coating.
  • Susceptor Semiconductor

    Susceptor Semiconductor

    Semicorex Susceptor Semiconductor, a revolutionary graphite susceptor meticulously crafted to elevate your semiconductor manufacturing to new heights. Engineered with precision and innovation, this susceptor boasts a CVD SiC coating that sets it apart in the industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Porous Graphite with TaC Coating

    Porous Graphite with TaC Coating

    Semicorex Porous Graphite with TaC Coating is a specialized material designed to address critical challenges in the growth of Silicon Carbide (SiC) crystals. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC ICP Etching Disk

    SiC ICP Etching Disk

    Semicorex SiC ICP Etching Disk is not merely components; it's essential enabler of cutting-edge semiconductor manufacturing as the semiconductor industry continues its relentless pursuit of miniaturization and performance, the demand for advanced materials like SiC will only intensify. It ensures the precision, reliability, and performance required to power our technology-driven world.We at Semicorex are dedicated to manufacturing and supplying high-performance SiC ICP Etching Disk that fuses quality with cost-efficiency.**
  • SiC Coated Graphite Trays

    SiC Coated Graphite Trays

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  • What is a semiconductor?

    Semiconductors are materials that guide electrical properties between conductors and insulators, with equal probability of loss and gain of electrons in the outermost layer of the atomic nucleus, and are easily made into PN junctions. Such as "silicon (Si)", "germanium (Ge)" and other materials.

  • What is graphitising？

    Graphitising is the process of transforming non-graphitic charcoal into graphitic charcoal with graphite three-dimensional regular ordered structure by high-temperature heat treatment, making full use of electrical resistance heat to heat the charcoal material to 2300~3000 ℃, and transforming the charcoal with amorphous chaotic layer structure into ordered graphite crystalline structure.

  • Silicon Carbide Wafer Epitaxy Technology

    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

  • Difficulty in preparing SiC substrates

    At present, the most important direction trend of substrate development is to expand the diameter. The 6-inch mass production line in the global SiC market is maturing, and leading companies have entered the 8-inch market.

  • SK Siltron Expands Its SiC Wafer Production with a $544 Million Loan from the U.S. Department of Energy

    The U.S. Department of Energy (DOE) recently confirmed a $544 million loan to SK Siltron, a semiconductor wafer manufacturer under SK Group.

  • Carbon Fiber Modification

    Improving the compatibility between carbon fiber and the matrix: Enhancing the mechanical properties of composite materials and strengthening the mechanical interlocking, physical adhesion, and chemical bonding between the fiber surface and the matrix.

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