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China SiC Graphite Trays Manufacturers, Suppliers, Factory

"Based on domestic market and expand abroad business" is our enhancement strategy for SiC Graphite Trays,Carrier SIC Epitaxy,Graphite Susceptors With Silicon Carbide Coating,SiC Coating Of Semiconductor,Barrel Single Wafer, In our efforts, we already have many shops in China and our products have won praise from customers worldwide. Welcome new and old customers to contact us for the future long term business relationships.
SiC Graphite Trays, Our organization. Situated inside the national civilized cities, the visitors is very easy, unique geographical and economic situations. We pursue a "people-oriented, meticulous manufacturing, brainstorm, construct brilliant" organization. hilosophy. Strict top quality management, fantastic service, reasonable cost in Myanmar is our stand on the premise of competition. If vital, welcome to make contact with us by our web page or telephone consultation, we're likely to be happy to serve you.

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  • Inductively Heated Barrel Epi System

    Inductively Heated Barrel Epi System

    If you need a graphite susceptor with exceptional thermal conductivity and heat distribution properties, look no further than the Semicorex Inductively Heated Barrel Epi System. Its high-purity SiC coating provides superior protection in high-temperature and corrosive environments, making it the ideal choice for use in semiconductor manufacturing applications.
  • Half Parts Drum Products Epitaxial Part

    Half Parts Drum Products Epitaxial Part

    Enhance the functionality and efficiency of your semiconductor devices with our cutting-edge Half Parts Drum Products Epitaxial Part. Specifically designed for the LPE reactor's intake components, this semi-cylindrical accessory plays a pivotal role in optimizing your semiconductor processes.
    Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Planetary Disk

    Planetary Disk

    Semicorex Planetary Disk, silicon carbide coated graphite wafer susceptor or carrier designed for Molecular Beam Epitaxy (MBE) processes within Metal-Organic Chemical Vapor Deposition (MOCVD) furnaces. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coating Susceptor

    TaC Coating Susceptor

    Semicorex TaC Coating Susceptor represents a pinnacle in material engineering, meticulously crafted from high-quality graphite and fortified with a tantalum carbide coating. Primarily engineered for employment within SiC crystal growth and SiC epitaxial processes, this innovative component stands as a beacon of durability and performance in extreme thermal and chemical environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coating Half-moon

    TaC Coating Half-moon

    Semicorex TaC Coating Half-moon is a specialized component crafted from tantalum carbide (TaC) coated graphite, designed for use in epitaxial processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • 8 inch EPI Susceptor

    8 inch EPI Susceptor

    Semicorex 8 Inch EPI Susceptor is a high-performance SiC-coated graphite wafer carrier designed for use in epitaxial deposition equipment. Choosing Semicorex ensures superior material purity, precision manufacturing, and consistent product reliability tailored to meet the demanding standards of the semiconductor industry.*
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    In their newly released annual report, TSMC Chairman Deyin Liu and CEO Chieh-Jia Wei revealed the progress related to the 2nm process.

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • How to do CMP Process

    In the process of silicon wafer manufacturing, after the crystal rod is cut into silicon wafers, it will need to be polished and cleaned to obtain a single crystal silicon wafer like a mirror.

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  • High-Purity Quartz: An Indispensable Material for the Semiconductor Industry

    High-purity quartz possesses remarkable physical and chemical properties. Its inherent crystal structure, shape, and lattice variations contribute to exceptional characteristics such as high-temperature resistance, corrosion resistance, abrasion resistance, low thermal expansion coefficient, high insulation, piezoelectric effects, resonant effects, and unique optical properties. These attributes make it an irreplaceable foundational material for the development of strategic and pillar industries.

  • GaN and SiC: Coexistence or Substitution?

    The push for higher power density and efficiency has become a primary driver of innovation across multiple industries, including data centers, renewable energy, consumer electronics, electric vehicles, and autonomous driving technologies. In the realm of wide bandgap (WBG) materials, Gallium Nitride (GaN) and Silicon Carbide (SiC) are currently the two core platforms, viewed as pivotal tools leading power semiconductor innovation. These materials are profoundly transforming the power electronics industry to address the ever-increasing demand for power.

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