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Our solutions are commonly regarded and trusted by users and can fulfill continuously developing financial and social demands for Semi Silicon Wafer,Wafer Susceptor,Sic Wafer Susceptor,MOCVD Susceptor,Susceptor CVD, We've been hunting forward to forming effective business marriage with new clients from the near upcoming!
Semi Silicon Wafer Lamp, Due to the stability of our products, timely supply and our sincere service, we are able to sell our goods not only over the domestic market, but also exported to countries and regions, including the Middle East, Asia, Europe and other countries and regions. At the same time, we also undertake OEM and ODM orders. We'll do our best to serve your company, and establish a successful and friendly cooperation with you.

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  • Wafer Holder for ICP Etching Process

    Wafer Holder for ICP Etching Process

    Semicorex's Wafer Holder for ICP Etching Process is the perfect choice for demanding wafer handling and thin film deposition processes. Our product boasts superior heat and corrosion resistance, even thermal uniformity, and optimal laminar gas flow patterns for consistent and reliable results.
  • ICP Plasma Etching Tray

    ICP Plasma Etching Tray

    Semicorex's ICP Plasma Etching Tray is engineered specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers provide even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • Silicon Carbide Graphite Substrate MOCVD Susceptor

    Silicon Carbide Graphite Substrate MOCVD Susceptor

    Semicorex Silicon Carbide Graphite Substrate MOCVD Susceptor is the ultimate choice for semiconductor manufacturers looking for a high-quality carrier that can deliver superior performance and durability. Its advanced material ensures even thermal profile and laminar gas flow pattern, delivering high-quality wafers.
  • Satellite Plate

    Satellite Plate

    Semicorex Satellite Plate is a critical component used in semiconductor epitaxy reactors, specifically designed for Aixtron G5+ equipment. Semicorex combines advanced material expertise with cutting-edge coating technology to deliver reliable, high-performance solutions tailored for demanding industrial applications.*
  • Upper Half Moon

    Upper Half Moon

    Semicorex Upper Half Moon is a semi-circular SiC coated graphite wafer susceptor designed for use in epitaxial reactors. Choose Semicorex for industry-leading material purity, precision machining, and uniform SiC coating that ensures long-lasting performance and superior wafer quality.*
  • SiC Arm

    SiC Arm

    Semicorex SiC Arm is a high-purity silicon carbide component designed for precise wafer handling and positioning in semiconductor manufacturing. Choosing Semicorex ensures unmatched material reliability, chemical resistance, and precision engineering that support the most demanding semiconductor processes.*
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  • Reviews

  • What is the advantage of silicon carbide?

  • What is isostatic graphite?

    Specialty graphite is graphite with carbon mass fraction greater than 99.99%, also known as "three high graphite" (high strength, high density, high purity). It is characterized by high strength, high density, high purity, high chemical stability, high thermal and electrical conductivity, high temperature resistance, radiation resistance, strong lubrication and easy processing. Isostatic graphite belongs to specialty graphite.

  • Advantages of SiC in EV industry

    As a wide-bandgap (WBG) semiconductor material, SiC's wider energy difference gives it higher thermal and electronic properties compared to traditional Si. This feature enables power devices to operate at higher temperatures, frequencies and voltages.

  • Method for preparing SiC powder

    Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • What is Thermal Annealing

    The annealing process, also known as Thermal Annealing, is a crucial step in semiconductor manufacturing.

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