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China Semi Silicon Wafer Manufacturers, Suppliers, Factory

Our solutions are commonly regarded and trusted by users and can fulfill continuously developing financial and social demands for Semi Silicon Wafer,Wafer Susceptor,Sic Wafer Susceptor,MOCVD Susceptor,Susceptor CVD, We've been hunting forward to forming effective business marriage with new clients from the near upcoming!
Semi Silicon Wafer Lamp, Due to the stability of our products, timely supply and our sincere service, we are able to sell our goods not only over the domestic market, but also exported to countries and regions, including the Middle East, Asia, Europe and other countries and regions. At the same time, we also undertake OEM and ODM orders. We'll do our best to serve your company, and establish a successful and friendly cooperation with you.

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  • Epi Pre Heat Ring

    Epi Pre Heat Ring

    Enhance the efficiency and precision of your semiconductor epitaxial processes with the Semicorex cutting-edge Epi Pre Heat Ring. Crafted with precision from SiC-coated graphite, this advanced ring plays a pivotal role in optimizing your epitaxial growth by pre-heating process gases before they enter the chamber.
  • SiC Shower Head

    SiC Shower Head

    Semicorex SiC Shower Head is an essential component in the epitaxial growth process, specifically designed to enhance the uniformity and efficiency of thin film deposition on semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Carbide Wafer Chuck

    Silicon Carbide Wafer Chuck

    The Semicorex Silicon Carbide Wafer Chuck is an essential component in the semiconductor epitaxial process. It serves as a vacuum chuck to securely hold wafers during critical manufacturing stages. We are committed to delivering top-quality products at competitive prices, positioning ourselves to be your long-term partner in China.*
  • Planetary Susceptor

    Planetary Susceptor

    Semicorex Planetary Susceptor is a high-purity graphite component with a SiC coating, designed for Aixtron G5+ reactors to ensure uniform heat distribution, chemical resistance, and high-precision epitaxial layer growth.*
  • Insulation Felt

    Insulation Felt

    Semicorex Insulation Felt for long crystal growth barrels is an essential component for manufacturers seeking to improve crystal yield, quality, and operational efficiency. Combining advanced material science with practical performance, it stands as a reliable solution for high-demand thermal management applications.*
  • Silicon Electrodes

    Silicon Electrodes

    Semicorex Silicon electrodes are high-performance components that combine efficient electrical conduction with precise gas distribution capabilities. Choosing Semicorex means partnering with a trusted expert who delivers superior quality, advanced manufacturing techniques, and reliable, customizable silicon electrode solutions tailored to your specific needs.*
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  • What is CVD for SiC

  • What is quartz?

    Quartz (SiO₂) material is very similar to glass at first glance, but the special thing is that the general glass is made up of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while the quartz contains only SiO₂ components, and the microstructure of its silicon dioxide tetrahedral structural units composed of a simple network.

  • Understanding the Complete Semiconductor Device Fabrication Process

    The fabrication of semiconductor devices primarily encompasses four types of processes: (1) Photolithography (2) Doping Techniques (3) Film Deposition (4) Etching Techniques The specific techniques involved include photolithography, ion implantation, rapid thermal processing (RTP), plasma-enhanced chemical vapor deposition (PECVD), sputtering, and both dry and wet etching methods.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

  • SiC Boats vs. Quartz Boats: Current Usage and Future Trends in Semiconductor Manufacturing

    This article delves into the usage and future trajectory of silicon carbide (SiC) boats in relation to quartz boats within the semiconductor industry, specifically focusing on their applications in solar cell manufacturing.

  • The unit in semiconductor: Angstrom

    As a unit of length, Angstrom (Å) is ubiquitous in integrated circuit manufacturing. From precise control of material thickness to miniaturization and optimization of device size, the understanding and application of Angstrom scale is the core to ensure the continuous development of semiconductor technology.

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