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China Gan On Silicon Carbide Manufacturers, Suppliers, Factory

We always believe that one's character decides products' quality, the details decides products' quality ,with the REALISTIC,EFFICIENT AND INNOVATIVE team spirit for Gan On Silicon Carbide,Gan On Sic,Gan Substrate,Epi Growth,Gan On Sic Substrate, We are generally looking ahead to forming effective business associations with new clientele around the world.
Gan On Silicon Carbide, To create more creative products and solutions, maintain high-quality goods and update not only our products and solutions but ourselves so as to keep us ahead of the world, and the last but most vital one: to make every client satisfied with everything we present and to grow stronger together. To be the real winner, starts here!

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    Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

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    High-purity quartz possesses remarkable physical and chemical properties. Its inherent crystal structure, shape, and lattice variations contribute to exceptional characteristics such as high-temperature resistance, corrosion resistance, abrasion resistance, low thermal expansion coefficient, high insulation, piezoelectric effects, resonant effects, and unique optical properties. These attributes make it an irreplaceable foundational material for the development of strategic and pillar industries.

  • Defect Detection in Silicon Carbide Wafer Processing

    SiC substrates are the most crucial component in the silicon carbide industry, accounting for nearly 50% of its value. Without SiC substrates, it is impossible to manufacture SiC devices, making them the essential material foundation.

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    The wafer notch is a V-shaped or U-shaped groove on the edge of a semiconductor wafer. Far from being a defect incurred during the manufacturing process, it is the critical structural marker that was intentionally designed, whose core function lies in enabling precise positioning and orientation identification of the wafer. Wafer flat was used as the orientation marking in the early stages of wafer technology development. However, as wafer sizes gradually increased, the flat-edge design occupied more effective area, thus being gradually replaced by the more compact notch.

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