China chemical vapor deposition silicon carbide Manufacturers, Suppliers, Factory

With our outstanding management, robust technical capability and strict top quality regulate system, we carry on to supply our shoppers with reputable top quality, reasonable charges and excellent companies. We purpose at becoming amongst your most reliable partners and earning your fulfillment for chemical vapor deposition silicon carbide,dry etch;,plasma etch,icp etching,inductively coupled plasma etching, Seeing believes! We sincerely welcome the new prospects abroad to set up company interactions and also expect to consolidate the interactions with all the long-established clients.
chemical vapor deposition silicon carbide, Aiming to grow to be by far the most professional supplier within this sector in Uganda, we keep researching on the creating procedure and raising the high quality of our principal products. Till now, the merchandise list has been updated on a regular basis and attracted customers from around the globe. In depth data can be obtained in our web page and you'll be served with good quality consultant service by our after-sale team. They're planning to let you to get complete acknowledge about our goods and make a satisfied negotiation. Small business check out to our factory in Uganda can also be welcome at any time. Hope to obtain your inquiries to get a happy co-operation.

Hot Products

  • EPI 3 1/4

    EPI 3 1/4" Barrel Susceptor

    Semicorex SiC coating EPI 3 1/4" Barrel Susceptor provides excellent thermal stability and resistance to chemical attack, while the graphite substrate offers superior heat transfer properties.
  • SiC Coated MOCVD Susceptor

    SiC Coated MOCVD Susceptor

    Semicorex is a leading manufacturer and supplier of SiC Coated MOCVD Susceptor. Our product is specially designed for semiconductor industries to grow the epitaxial layer on the wafer chip. The high purity Silicon Carbide coated graphite carrier is used as the center plate in MOCVD, with a gear or ring-shaped design. Our susceptor is widely used in MOCVD equipment, ensuring high heat and corrosion resistance, and great stability in extreme environments.
  • Semiconductor Wafer Carrier for MOCVD Equipment

    Semiconductor Wafer Carrier for MOCVD Equipment

    You can rest assured to buy Semiconductor Wafer Carrier for MOCVD Equipment from our factory. Semiconductor wafer carriers are an essential component of MOCVD equipment. They are used to transport and protect semiconductor wafers during the manufacturing process. Semiconductor Wafer Carriers for MOCVD Equipment are made of high-purity materials and are designed to maintain the integrity of the wafers during processing.
  • TaC Coating Planetary Plate

    TaC Coating Planetary Plate

    Semicorex TaC Coating Planetary Plate is a high-performance component designed specifically for MOCVD systems. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Focus Ring

    SiC Focus Ring

    Semicorex SiC Focus Ring is a high-purity silicon carbide ring component designed to optimize plasma distribution and wafer process uniformity in semiconductor manufacturing. Choosing Semicorex means ensuring consistent quality, advanced material engineering, and reliable performance trusted by leading semiconductor fabs worldwide.*
  • SiC-coated Graphite MOCVD Susceptors

    SiC-coated Graphite MOCVD Susceptors

    SiC-coated graphite MOCVD susceptors are the essential components used in Metal-organic chemical vapor deposition (MOCVD) equipment, which are responsible for holding and heating wafer substrates. With their superior thermal management, chemical resistance, and dimensional stability, SiC-coated graphite MOCVD susceptors are regarded as the optimal option for high-quality wafer substrate epitaxy. In the wafer fabrication, the MOCVD technology is used to construct epitaxial layers on the surface of wafer substrates, preparing for the fabrication of advanced semiconductor devices. Since the growth of epitaxial layers is affected by multiple factors, the wafer substrates cannot be directly placed in the MOCVD equipment for deposition. SiC-coated graphite MOCVD susceptors are required to hold and heat the wafer substrates, creating stable thermal conditions for the growth of epitaxial layers. Therefore, the performance of SiC-coated graphite MOCVD susceptors directly determines the uniformity and purity of thin film materials, which in turn affects the manufacturing of advanced semiconductor devices.

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