English
Home > Products > Ceramic Tube For Furnace

China Ceramic Tube For Furnace Manufacturers, Suppliers, Factory

To create much more benefit for shoppers is our enterprise philosophy; client growing is our working chase for Ceramic Tube For Furnace,Sleeve Bearing,High Temperature Ceramic Tube,Ceramic Tube Price,Ceramic Tubes For Sale, We sincerely welcome mates from all over the globe to cooperate with us to the basis of long-term mutual added benefits.
Ceramic Tube For Furnace, We'll supply much better products and solutions with diversified designs and expert services. At the same time, welcome OEM, ODM orders, invite friends at home and abroad together common development and achieve win-win, integrity innovation, and expand business opportunities! If you have any question or need more information be sure to feel free to contact us. We are looking forward to receiving your enquiries soon.

Related Products

Hot Products

  • Ceramic Axle Sleeve

    Ceramic Axle Sleeve

    Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Ceramic Axle Sleeve has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Focus Ring

    SiC Focus Ring

    Semicorex SiC Focus Ring is a high-purity silicon carbide ring component designed to optimize plasma distribution and wafer process uniformity in semiconductor manufacturing. Choosing Semicorex means ensuring consistent quality, advanced material engineering, and reliable performance trusted by leading semiconductor fabs worldwide.*
  • Silicon Etch Plate for PSS Etching Applications

    Silicon Etch Plate for PSS Etching Applications

    Semicorex's Silicon Etch Plate for PSS Etching Applications is a high-quality, ultra-pure graphite carrier that is specifically designed for epitaxial growth and wafer handling processes. Our carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The silicon etch plate for PSS etching applications has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • Robot End Effector

    Robot End Effector

    Semicorex is a leading independently owned manufacturer of Silicon Carbide Coated Graphite, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our Robot End Effector has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Wafer Carrier Handles

    Wafer Carrier Handles

    Semicorex Wafer Carrier Handles, made from high-quality PFA material, are designed for the safe and efficient transport of semiconductor wafers within wafer cassettes. Choose Semicorex for our commitment to providing durable, high-purity components that ensure superior performance and reliability in semiconductor manufacturing processes.*
  • Ceramic Electrostatic Chucks

    Ceramic Electrostatic Chucks

    Semicorex ceramic electrostatic chucks are precision electrostatic adsorption components made of high-performance alumina and aluminum nitride ceramics, which uses the principle of electrostatic adsorption to clamp and fix wafers. It is widely used in semiconductor manufacturing fields. Semicorex has advanced technology, high-quality materials, and cost-effective products. We look forward to becoming your reliable supply partner in China.
  • Related Blog
  • Reviews

  • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

    Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

  • Can you grind silicon carbide?

    Silicon carbide (SiC) has important applications in areas such as power electronics, high-frequency RF devices, and sensors for high-temperature-resistant environments due to its excellent physicochemical properties. However, the slicing operation during SiC wafer processing introduces damages on the surface, which, if left untreated, can expand during the subsequent epitaxial growth process and form epitaxial defects, thus affecting the yield of the device.

  • TaC Coating Crucible for AlN Crystal Growth

    The third generation of semiconductor materials AlN belongs to the direct bandgap semiconductor, its bandwidth of 6.2 eV, with high thermal conductivity, resistivity, breakdown field strength, as well as excellent chemical and thermal stability, is not only an important blue light, ultraviolet materials, or electronic devices and integrated circuits, important packaging, dielectric isolation and insulation materials, especially for high-temperature high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

  • High-Purity Quartz: An Indispensable Material for the Semiconductor Industry

    High-purity quartz possesses remarkable physical and chemical properties. Its inherent crystal structure, shape, and lattice variations contribute to exceptional characteristics such as high-temperature resistance, corrosion resistance, abrasion resistance, low thermal expansion coefficient, high insulation, piezoelectric effects, resonant effects, and unique optical properties. These attributes make it an irreplaceable foundational material for the development of strategic and pillar industries.

  • What Challenges Are Involved in SiC Manufacturing?

    In the landscape of wide bandgap semiconductor materials, silicon carbide (SiC) has emerged as a highly regarded material, particularly excelling in the high-power conversion domain.

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept