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    6 inch SiC Boat

    Semicorex 6 Inch SiC Boat is a high-performance wafer carrier made from silicon carbide, designed for use in high-temperature semiconductor processes such as oxidation and diffusion. Semicorex provides superior-quality products with exceptional thermal stability, excellent chemical resistance, and a commitment to reliable, long-lasting performance in demanding semiconductor applications.*
  • SiC O Ring

    SiC O Ring

    Semicorex SiC O Ring is highly valued in a range of industries for their exceptional sealing capabilities and material properties. Its use spans applications where extreme conditions such as high temperatures, aggressive chemicals, mechanical stress, and stringent cleanliness are routine.**
  • 8-inch Waferholder Rings

    8-inch Waferholder Rings

    Semicorex 8-inch Waferholder Rings are designed to provide precise wafer fixation and exceptional performance in aggressive thermal and chemical environments. Semicorex delivers application-specific engineering, tight dimensional control, and consistent SiC coating quality to meet the rigorous demands of advanced semiconductor processing.*
  • ICP Etching Wafer Holder

    ICP Etching Wafer Holder

    Semicorex's ICP etching wafer holder is the perfect solution for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • TaC Coated Porous Graphite

    TaC Coated Porous Graphite

    Semicorex TaC Coated Porous graphite, is an advanced high-purity material on semiconductor processing. This crucial piece of equipment plays a pivotal role in the process of single crystal SiC growth. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Metallic Shower Head

    Metallic Shower Head

    The Metallic Shower head, known as a gas distribution plate or gas shower head, is a critical component extensively utilized in semiconductor manufacturing processes.Its primary function is to evenly distribute gases into a reaction chamber, ensuring that semiconductor materials come into uniform contact with process gases.**
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  • Electronic Grade Silicon Carbide Powder

    As the core material of the third-generation semiconductors, silicon carbide (SiC) is playing an increasingly important role in high-tech fields such as new energy vehicles, photovoltaic energy storage, and 5G communications due to its excellent physical properties.

  • What are epitaxial wafers used for?

    Epitaxial wafers have been used in the electronics industry for decades, but their importance has only increased as technology has advanced. In this article, we will explore what epitaxial wafers are and why they are such an essential component of modern electronics.

  • Why Is There Increasing Demand for High-Thermal Conductivity SiC Ceramics in the Semiconductor Industry?

    Currently, silicon carbide (SiC) is a highly active area of research in thermal conductive ceramic materials both domestically and internationally.

  • Why choose liquid phase epitaxy method?

    Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:

  • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

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