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  • MOCVD Satellite Holder Plate

    MOCVD Satellite Holder Plate

    Semicorex MOCVD Satellite Holder Plate is an outstanding carrier designed for use in the semiconductor industry. Its high purity, excellent corrosion resistance, and even thermal profile make it an excellent choice for those looking for a carrier that can withstand the demands of the semiconductor manufacturing process. We are committed to providing our customers with high-quality products that meet their specific requirements. Contact us today to learn more about our MOCVD Satellite Holder Plate and how we can help you with your semiconductor manufacturing needs.
  • Silicon Carbide Epitaxy Susceptor

    Silicon Carbide Epitaxy Susceptor

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Epitaxy Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Silicon Carbide Wafer Grinding Wheel

    Silicon Carbide Wafer Grinding Wheel

    Experience the epitome of precision in semiconductor wafer surface refinement with our cutting-edge Silicon Carbide Wafer Grinding Wheel. This disc-shaped component, meticulously designed for semiconductor equipment, redefines the standards of surface grinding, ensuring optimal results for semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • High-purity Porous Graphite Material

    High-purity Porous Graphite Material

    As the professional manufacturer, we would like to provide you High-purity Porous Graphite Material. Semicorex provide high-quality porous graphite material with customized service, we offer high specifications porous graphite. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Furnace Tube

    SiC Furnace Tube

    Semicorex SiC Furnace Tube is an indispensable asset for semiconductor manufacturers aiming to enhance their diffusion processes. With its unparalleled material properties, precision design, and ease of use, our SiC Furnace Tube is the ideal solution for improving yield and product quality. Trust Semicorex to provide the cutting-edge solutions you need to excel in the fast-paced semiconductor landscape.*
  • Monocrystalline Silicon Wafers

    Monocrystalline Silicon Wafers

    Monocrystalline silicon wafers, crafted by the excellent high-purity monocrystalline silicon, offer exceptional flatness, low defect density, and superior quality. Semicorex prioritizes customer needs and is committed to providing premium wafer solutions required for advanced semiconductor industry.
  • Related Blog
  • Reviews

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • TaC Coating Crucible for AlN Crystal Growth

    The third generation of semiconductor materials AlN belongs to the direct bandgap semiconductor, its bandwidth of 6.2 eV, with high thermal conductivity, resistivity, breakdown field strength, as well as excellent chemical and thermal stability, is not only an important blue light, ultraviolet materials, or electronic devices and integrated circuits, important packaging, dielectric isolation and insulation materials, especially for high-temperature high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

  • 3 methods of graphite molding

    The four main molding methods for graphite molding are: extrusion molding, molding, vibratory molding and isostatic molding. Most of the common carbon/graphite materials on the market are molded by hot extrusion and molding (cold or hot), and isostatic molding is a method with leading molding performance. Vibration molding is generally used to manufacture medium and coarse structural graphite, particle size between 0.5-2mm particle size, generally dominated by di-roasted graphitized products, density between 1.55-1.75kg/m³, coarser particles, rougher surface, can not be used for precision machining. It is mainly used in chemical industry and metal smelting.

  • Surface Polishing of Silicon Wafers

    Silicon wafer surface polishing is a crucial process in semiconductor manufacturing. Its primary goal is to achieve extremely high standards of surface flatness and roughness by removing micro-defects, layers of stress damage, and contamination from impurities such as metal ions.

  • Application of GaN

    There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.

  • What is the notch on wafers?

    The wafer notch is a V-shaped or U-shaped groove on the edge of a semiconductor wafer. Far from being a defect incurred during the manufacturing process, it is the critical structural marker that was intentionally designed, whose core function lies in enabling precise positioning and orientation identification of the wafer. Wafer flat was used as the orientation marking in the early stages of wafer technology development. However, as wafer sizes gradually increased, the flat-edge design occupied more effective area, thus being gradually replaced by the more compact notch.

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