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Ceramic Seal, Our business activities and processes are engineered to make sure our customers have access to widest range of products with the shortest supply time lines. This achievement is made possible by our highly skilled and experienced team. We look for people who want to grow with us around the globe and stand out from the crowd. We now have people who embrace tomorrow, have vision, love stretching their minds and going far beyond what they thought was achievable.

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  • Inductively-Coupled Plasma (ICP)

    Inductively-Coupled Plasma (ICP)

    Semicorex's silicon carbide coated susceptor for Inductively-Coupled Plasma (ICP) is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • SiC/SiC Ceramic Matrix Composites

    SiC/SiC Ceramic Matrix Composites

    SiC/SiC ceramic matrix composites (CMCs) are an innovative solution to improve aerospace applications, specifically turbine engine components and thermal protection systems. By utilizing SiC, the performance and durability of these critical components can be significantly enhanced, resulting in safer and more efficient aerospace technologies. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • High-purity Porous Graphite Material

    High-purity Porous Graphite Material

    As the professional manufacturer, we would like to provide you High-purity Porous Graphite Material. Semicorex provide high-quality porous graphite material with customized service, we offer high specifications porous graphite. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Fine Powder

    SiC Fine Powder

    Semicorex SiC Fine Powder is a high-quality, ultra-fine powder known for its exceptional purity and controlled particle size distribution. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Coated Waferholder

    SiC Coated Waferholder

    Semicorex SiC Coated Waferholder is a high-performance component designed for the precise placement and handling of SiC wafers during epitaxy processes. Choose Semicorex for its commitment to delivering advanced, reliable materials that enhance the efficiency and quality of semiconductor manufacturing.*
  • SiC Coating Component

    SiC Coating Component

    Semicorex SiC Coating Component is an essential material designed to meet the demanding requirements of the SiC epitaxy process, a pivotal stage in semiconductor manufacturing. It plays a critical role in optimizing the growth environment for silicon carbide (SiC) crystals, contributing significantly to the quality and performance of the final product.*
  • Related Blog
  • Reviews

  • What is a semiconductor?

    Semiconductors are materials that guide electrical properties between conductors and insulators, with equal probability of loss and gain of electrons in the outermost layer of the atomic nucleus, and are easily made into PN junctions. Such as "silicon (Si)", "germanium (Ge)" and other materials.

  • What are epitaxial wafers used for?

    Epitaxial wafers have been used in the electronics industry for decades, but their importance has only increased as technology has advanced. In this article, we will explore what epitaxial wafers are and why they are such an essential component of modern electronics.

  • Dislocation in SiC crystals

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

  • What is porous graphite?

    Porous graphite, also known as porous carbon or porous graphite material, is a graphite form that has been specially engineered to have an interconnected network of pores or voids within its structure.

  • Key Parameters of Silicon Carbide (SiC) Substrates

    The Silicon Carbide (SiC) production process encompasses the preparation of substrate and epitaxy from the materials side, followed by chip design and manufacturing, device packaging, and finally, distribution to downstream application markets. Among these stages, substrate material processing is the most challenging aspect of the SiC industry. SiC substrates are both hard and brittle, making cutting, grinding, and polishing extremely difficult. This increases the likelihood of defects during processing and reduces the yield rate. Currently, major international SiC manufacturers are planning to transition from 6-inch to 8-inch SiC wafers. Overcoming the challenges associated with 8-inch substrates has become a critical benchmark for the SiC industry. This article will introduce the key parameters of SiC substrates.

  • How Are Ceramic Electrostatic Chucks Actually Produced?

    In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process. Any deviation can lead to uneven ion bombardment, causing undesirable angles and variations in etching rates. To address these challenges, engineers have developed Electrostatic Chucks (ESCs), which have significantly improved etching quality and stability. This article delves into the design and functionality of ESCs, focusing on one key aspect: the electrostatic principles behind wafer adhesion.

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