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What is Semiconductor Ion Implantation Technology?

In semiconductor manufacturing, ion implantation involves using high-energy accelerators to inject specific impurity atoms, such as arsenic or boron, into a silicon substrate.

Annealing

Annealing after ion implantation is a key step in semiconductor device manufacturing, which affects the performance and reliability of the device.

AlN crystal growth by PVT method

The third generation of wide bandgap semiconductor materials, including gallium nitride (GaN), silicon carbide (SiC), and aluminum nitride (AlN), exhibit excellent electrical, thermal, and acousto-optical properties. These materials address the limitations of the first and second generation of semic......

SiGe and Si Selective Etching Technology

A critical step in the fabrication of n-type GAAFETs involves the high-selectivity etching of SiGe:Si stacks prior to the deposition of inner spacers, generating silicon nanosheets and releasing channels.

SiGe in Chip Manufacturing: A Professional News Report

To meet the demands for high performance and low power consumption in the realm of modern semiconductor technology, SiGe (Silicon Germanium) has emerged as a composite material of choice in semiconductor chip manufacturing due to its unique physical and electrical properties.

The unit in semiconductor: Angstrom

As a unit of length, Angstrom (Å) is ubiquitous in integrated circuit manufacturing. From precise control of material thickness to miniaturization and optimization of device size, the understanding and application of Angstrom scale is the core to ensure the continuous development of semiconductor te......

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