English
Home > Products > Susceptor Induction Heating

China Susceptor Induction Heating Manufacturers, Suppliers, Factory

The customer satisfaction is our primary target. We uphold a consistent level of professionalism, quality, credibility and service for Susceptor Induction Heating,MOCVD Heater,Graphite Crucible,Electric Graphite Heater,Sic Heating Element, Honesty is our principle, professional operation is our work, service is our goal, and customers' satisfaction is our future!
Susceptor Induction Heating, Our company now has many department, and there have more than 20 employees in our company. We set up sales shop, show room, and product warehouse. In the meantime, we registered our own brand. Now we have tightened inspection for quality of product.

Related Products

Hot Products

  • ICP Plasma Etching System

    ICP Plasma Etching System

    Semicorex's SiC Coated carrier for ICP Plasma Etching System is a reliable and cost-effective solution for high-temperature wafer handling processes such as epitaxy and MOCVD. Our carriers feature a fine SiC crystal coating that provides superior heat resistance, even thermal uniformity, and durable chemical resistance.
  • TaC Coated Susceptor

    TaC Coated Susceptor

    Semicorex TaC Coated Susceptor (Tantalum Carbide Coated Susceptor) is a highly specialized component used in semiconductor manufacturing and other high-temperature applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Wafer Holder

    SiC Wafer Holder

    Semicorex SiC (Silicon Carbide) SiC Wafer Holder, also known as a wafer chuck or wafer carrier, is a specialized tool used in the handling and processing of semiconductor wafers. It is designed to securely hold and protect the delicate silicon carbide wafers during various stages of fabrication. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Graphite Top Plates

    Graphite Top Plates

    Semicorex Graphite Top Plates are precision-engineered fixtures designed for secure and reliable handling of hot glass bottles in high-temperature manufacturing environments. Choose Semicorex for unmatched material quality, custom machining capabilities, and consistent performance trusted by leading glass producers worldwide.*
  • SiC Graphite RTP Carrier Plate for MOCVD

    SiC Graphite RTP Carrier Plate for MOCVD

    Semicorex SiC Graphite RTP Carrier Plate for MOCVD offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With a high-quality SiC coated graphite, this product is engineered to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.
  • Refined Graphite Mold

    Refined Graphite Mold

    Semicorex Refined Graphite Mold is a versatile and efficient tool in various industrial casting and molding processes. Its high purity, low thermal expansion, and excellent surface finish make it a preferred choice for applications requiring precision and quality.
  • Related Blog
  • Reviews

  • How to Manufacture Graphite Rods?

    Compression molding, isostatic pressing, and rod extrusion are the three most common methods for producing graphite rods, similar to those used for creating graphite tubes.

  • How is Silicon Carbide Manufactured?

  • The unit in semiconductor: Angstrom

    As a unit of length, Angstrom (Å) is ubiquitous in integrated circuit manufacturing. From precise control of material thickness to miniaturization and optimization of device size, the understanding and application of Angstrom scale is the core to ensure the continuous development of semiconductor technology.

  • What is the difference between arsenic doping and phosphorus doping in single crystal Silicon

    Both are N-type semiconductors, but what's the difference between arsenic and phosphorus doping in single-crystal silicon? In single-crystal silicon, arsenic (As) and phosphorus (P) are both commonly used N-type dopants (pentavalent elements that provide free electrons). However, due to differences in atomic structure, physical properties, and processing characteristics, their doping effects and application scenarios differ significantly.

  • What is the process of SiC epitaxial?

    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

Related Search

Graphite Susceptor Induction HeatingSilicon Carbide Susceptor Induction Heating

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept