China Graphite Susceptor Induction Heating Manufacturers, Suppliers, Factory

In the realm of semiconductor device fabrication, the precise control of crystal growth is paramount for achieving high-quality and reliable devices. One technique that has played a pivotal role in this domain is Liquid-Phase Epitaxy (LPE).

Semiconductor manufacturing, the cornerstone of modern technological advancement, is in constant pursuit of smaller, faster, and more efficient integrated circuits. This relentless pursuit drives the need for increasingly precise and sophisticated manufacturing processes, where each step relies heavily on high-performance, high-quality, and high-precision equipment. Silicon carbide (SiC), a high-performance structural ceramic material, plays a crucial role in this demanding environment.

MOCVD is a new vapor phase epitaxial growth technology developed on the basis of vapor phase epitaxial growth (VPE).

The third-generation wide bandgap semiconductor materials, such as Gallium Nitride (GaN) and Silicon Carbide (SiC), are renowned for their exceptional optoelectronic conversion and microwave signal transmission capabilities. These materials meet the demanding requirements of high-frequency, high-temperature, high-power, and radiation-resistant electronic devices. Therefore, they have vast application prospects in new-generation mobile communications, new energy vehicles, smart grids, and LED technologies. The comprehensive development of the third-generation semiconductor industry urgently requires breakthroughs in key core technologies, continual advancement in device design and innovation, and a resolution to import dependencies.

The tray (base) that supports SiC wafers, also known as a "susceptor," is a core component of semiconductor manufacturing equipment. And what exactly is this susceptor that carries the wafers?

Silicon carbide (SiC), as a wide bandgap semiconductor material, offers unparalleled advantages in high-power, high-temperature, and high-frequency applications.