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China Sinlicon Epitaxy Manufacturers, Suppliers, Factory

Sticking to the principle of "Super Good quality, Satisfactory service" ,We are striving to become an excellent organization partner of you for Sinlicon Epitaxy,Etch Carrier(ICP/PSS),High Purity Graphite,Graphite Disc,ICP Etching Carrier, Our goal is always to enable clients comprehend their plans. We have been creating good endeavours to accomplish this win-win scenario and sincerely welcome you to join us.
Sinlicon Epitaxy, At existing our sales network is growing continually, improving service quality to meet customer's demand. If you are interested in any goods , be sure to contact us at anytime. We have been looking forward to forming successful business relationships with you in near future.

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    The coated parts in semiconductor silicon single crystal hot field are generally coated by CVD method, including pyrolytic carbon coating, Silicon Carbide coating and Tantalum Carbide coating, each with different characteristics.

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    In semiconductor manufacturing, atomic-level flatness is usually used to describe the global flatness of the wafer, with the unit of nanometers (nm).

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    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

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    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

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