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China Sinlicon Epitaxy Manufacturers, Suppliers, Factory

Sticking to the principle of "Super Good quality, Satisfactory service" ,We are striving to become an excellent organization partner of you for Sinlicon Epitaxy,Etch Carrier(ICP/PSS),High Purity Graphite,Graphite Disc,ICP Etching Carrier, Our goal is always to enable clients comprehend their plans. We have been creating good endeavours to accomplish this win-win scenario and sincerely welcome you to join us.
Sinlicon Epitaxy, At existing our sales network is growing continually, improving service quality to meet customer's demand. If you are interested in any goods , be sure to contact us at anytime. We have been looking forward to forming successful business relationships with you in near future.

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  • SiC Coated MOCVD Susceptor

    SiC Coated MOCVD Susceptor

    Semicorex is a leading manufacturer and supplier of SiC Coated MOCVD Susceptor. Our product is specially designed for semiconductor industries to grow the epitaxial layer on the wafer chip. The high purity Silicon Carbide coated graphite carrier is used as the center plate in MOCVD, with a gear or ring-shaped design. Our susceptor is widely used in MOCVD equipment, ensuring high heat and corrosion resistance, and great stability in extreme environments.
  • Susceptors for MOCVD Reactors

    Susceptors for MOCVD Reactors

    Semicorex's Susceptors for MOCVD Reactors are high-quality products used in the semiconductor industry for various applications such as silicon carbide layers and epitaxy semiconductor. Our product is available in gear or ring shape and is designed to achieve high-temperature oxidation resistance, making it stable at temperatures up to 1600°C.
  • Blue Green LED Epitaxial Susceptor

    Blue Green LED Epitaxial Susceptor

    Semicorex Blue Green LED Epitaxial Susceptors make the manufacture of high-quality LED wafers more efficient. We have been manufacturer and supplier of silicon carbide coated susceptor for many years. Our Blue Green LED Epitaxial Susceptor has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • GaN-on-SiC Substrate

    GaN-on-SiC Substrate

    Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our GaN-on-SiC Substrate susceptors have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC ALD Susceptor

    SiC ALD Susceptor

    Semicorex SiC ALD Susceptor offers numerous advantages in ALD processes, including high-temperature stability, enhanced film uniformity and quality, improved process efficiency, and extended susceptor lifetime. These benefits make the SiC ALD Susceptor a valuable tool for achieving high-performance thin films in various demanding applications.**
  • LPE Part

    LPE Part

    Semicorex LPE Part is a SiC-coated component specifically designed for the SiC epitaxy process, offering exceptional thermal stability and chemical resistance to ensure efficient operation in high-temperature and harsh environments. By choosing Semicorex products, you benefit from high-precision, long-lasting custom solutions that optimize the SiC epitaxy growth process and enhance production efficiency.*
  • Related Blog
  • Reviews

  • What is the process of isostatic graphite manufacturing?

    The process of isostatic graphite manufacturing is Selecting raw materials, Blending, Molding, Isostatic pressing, Carbonization, Graphitization. 

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • Advantages and Disadvantages of Gallium Nitride (GaN) Applications

    As the world looks for new opportunities in semiconductors, gallium nitride continues to stand out as a potential candidate for future power and RF applications. However, for all the benefits it offers, it still faces a major challenge; there are no P-type (P-type) products. Why is GaN touted as the next major semiconductor material, why is the lack of P-type GaN devices a major drawback, and what does this mean for future designs?

  • Method for preparing SiC powder

    Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

  • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

  • Wolfspeed Pauses German Semiconductor Plant Construction Plans

    According to reports from German media, U.S. chip manufacturer Wolfspeed is pausing its plans to build a semiconductor plant in Germany.

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