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  • SiC Coated ICP Etching Carrier

    SiC Coated ICP Etching Carrier

    Semicorex SiC Coated ICP Etching Carrier engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • ICP Plasma Etching Tray

    ICP Plasma Etching Tray

    Semicorex's ICP Plasma Etching Tray is engineered specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers provide even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • Epi-SiC Susceptor

    Epi-SiC Susceptor

    Semicorex Epi-SiC Susceptor, a component engineered with meticulous attention to detail, is indispensable for cutting-edge semiconductor fabrication, especially in epitaxial applications. The Epi-SiC Susceptor’s design, which embodies precision and innovation, supports the epitaxial deposition of semiconductor materials on wafers, ensuring exceptional efficiency and dependability in performance. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • Plate for Epitaxial Growth

    Plate for Epitaxial Growth

    The Semicorex Plate for Epitaxial Growth stands as a critical element specifically designed to cater to the intricacies of epitaxial processes. Customizable to meet distinct specifications and preferences, our offering delivers an individually tailored solution that seamlessly fits your unique operational needs. We offer a range of customization options, from size alterations to variations in the coating application, equipping us to engineer and supply a product capable of enhancing performance across various application scenarios. We at Semicorex are dedicated to manufacturing and supplying high-performance Plates for Epitaxial Growth that fuse quality with cost-efficiency.
  • SiC Wafer Susceptors for MOCVD

    SiC Wafer Susceptors for MOCVD

    The Semicorex SiC Wafer Susceptors for MOCVD are a paragon of precision and innovation, specifically crafted to facilitate the epitaxial deposition of semiconductor materials onto wafers. The plates’ superior material properties enable them to withstand the stringent conditions of epitaxial growth, including high temperatures and corrosive environments, making them indispensable for high-precision semiconductor manufacturing. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Wafer Susceptors for MOCVD that fuse quality with cost-efficiency.
  • Tantalum Carbide Halfmoon Part

    Tantalum Carbide Halfmoon Part

    Semicorex Tantalum Carbide Halfmoon Part is a crucial component utilized in the semiconductor epitaxy process, a critical stage in the manufacturing of semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Related Blog
  • Reviews

  • What is the process of SiC epitaxial?

    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

  • LPE Apparatus

    In the realm of semiconductor device fabrication, the precise control of crystal growth is paramount for achieving high-quality and reliable devices. One technique that has played a pivotal role in this domain is Liquid-Phase Epitaxy (LPE).

  • Advantages and Disadvantages of Gallium Nitride (GaN) Applications

    As the world looks for new opportunities in semiconductors, gallium nitride continues to stand out as a potential candidate for future power and RF applications. However, for all the benefits it offers, it still faces a major challenge; there are no P-type (P-type) products. Why is GaN touted as the next major semiconductor material, why is the lack of P-type GaN devices a major drawback, and what does this mean for future designs?

  • Silicon Carbide Industry

    The silicon carbide industry involves a chain of processes that include substrate creation, epitaxial growth, device design, device manufacturing, packaging, and testing. In general, silicon carbide is created as ingots, which are then sliced, ground, and polished to produce a silicon carbide substrate.

  • The Study on Reaction-Sintered SiC Ceramics and Their Properties

    Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.

  • Final polishing of the silicon wafer surface

    To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

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