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Our primary goal is to offer our clients a serious and responsible business relationship, providing personalized attention to all of them for SiC Coated Graphite Wafer Carrier,RTP/RTA Carrier,SiC-Coated CVD Susceptor,SiC Coating RTP Carrier Tray,Graphite Wafer Tray, Safety by innovation is our promise to each other.
SiC Coated Graphite Wafer Carrier, We have been in operation for more than 10 years. We have been dedicated to quality products and solutions and consumer support. We currently own 27 product utility and design patents. We invite you to visit our company for a personalized tour and advanced business guidance.

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    8 inch EPI Bottom Ring

    Semicorex 8 inch EPI Bottom Ring is a robust SiC coated graphite component essential for epitaxial wafer processing. Choose Semicorex for unmatched material purity, coating precision, and reliable performance in every production cycle.*
  • Lithography Machine Skeleton

    Lithography Machine Skeleton

    Semicorex lithography machine skeleton is an essential structural component designed to support and stabilize the intricate machinery involved in photolithography processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • CVD Epitaxial Deposition In Barrel Reactor

    CVD Epitaxial Deposition In Barrel Reactor

    Semicorex CVD Epitaxial Deposition In Barrel Reactor is a highly durable and reliable product for growing epixial layers on wafer chips. Its high-temperature oxidation resistance and high purity make it suitable for use in the semiconductor industry. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for high-quality epixial layer growth.
  • Quartz 12 inch Outer Tube

    Quartz 12 inch Outer Tube

    Semicorex Quartz 12 Inch Outer Tube is a specialized component meticulously designed for use in the semiconductor industry, where precision, reliability, and high performance are paramount. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • LPE SiC-Epi Halfmoon

    LPE SiC-Epi Halfmoon

    Semicorex LPE SiC-Epi Halfmoon is an indispensable asset in the world of epitaxy, providing a robust solution to the challenges posed by high temperatures, reactive gases, and stringent purity requirements.**
  • TaC Coating Guide Ring

    TaC Coating Guide Ring

    Semicorex TaC Coating Guide Ring serves as a paramount part within metal-organic chemical vapor deposition (MOCVD) equipment, ensuring the precise and stable delivery of precursor gases during the epitaxial growth process. The TaC Coating Guide Ring represents a series of properties that make it ideal for withstanding the extreme conditions found within the MOCVD reactor chamber.**
  • Related Blog
  • Reviews

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • Application of GaN

    There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.

  • Ceramic Heaters

    In the front-end process (FEOL) of semiconductor manufacturing, the wafer needs to be subjected to various process treatments, especially the wafer needs to be heated to a certain temperature, and there are strict requirements, because the uniformity of temperature has a very important impact on the product yield; at the same time, semiconductor equipment needs to work in the presence of vacuum, plasma and chemical gases, which requires the use of ceramic heaters.

  • Wafer manufacturing

    Wafers are essential raw materials for integrated circuits, power devices, and semiconductor discrete devices. Over 90% of integrated circuits are manufactured using high-purity, high-quality wafers. The quality and supply capacity of these wafers within the industry are directly linked to the overall performance and competitiveness of integrated circuits. In this discussion, we will introduce the wafer manufacturing process in detail.

  • What is the process of SiC epitaxial?

    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

  • The Application Prospects of 12-Inch Silicon Carbide Substrates

    Silicon carbide (SiC), as a wide bandgap semiconductor material, offers unparalleled advantages in high-power, high-temperature, and high-frequency applications.

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