English
Home > Products > semiconductor integrated circuits

China semiconductor integrated circuits Manufacturers, Suppliers, Factory

We try for excellence, services the customers", hopes to become the ideal cooperation team and dominator company for staff, suppliers and buyers, realizes value share and continuous marketing for semiconductor integrated circuits,Silicon Parts,electronic components,monocrystal silicon parts,Si single crystal, In purchase to expand our international market, we mainly provide our oversea prospects Top quality performance items and assistance.
semiconductor integrated circuits, In order to meet more market demands and long-term development, a 150, 000-square-meter new factory is under construction, which will be put into use in 2014. Then, we shall own a large capacity of producing. Of course, we are going to continue improving the service system to meet the requirements of customers, bringing health, happiness and beauty to everyone.

Related Products

Hot Products

  • Silicon Epitaxial Deposition In Barrel Reactor

    Silicon Epitaxial Deposition In Barrel Reactor

    If you need a high-performance graphite susceptor for use in semiconductor manufacturing applications, the Semicorex Silicon Epitaxial Deposition In Barrel Reactor is the ideal choice. Its high-purity SiC coating and exceptional thermal conductivity provide superior protection and heat distribution properties, making it the go-to choice for reliable and consistent performance in even the most challenging environments.
  • RTP Carrier for MOCVD Epitaxial Growth

    RTP Carrier for MOCVD Epitaxial Growth

    Semicorex RTP Carrier for MOCVD Epitaxial Growth is ideal for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Carbon graphite susceptors and quartz crucibles are processed by MOCVD on the surface of graphite, ceramics, etc. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • TaC Coated Graphite Susceptor

    TaC Coated Graphite Susceptor

    Semicorex cutting-edge TaC Coated Graphite Susceptor, a revolutionary component designed to elevate your wafer epitaxial process to new heights of efficiency and precision. Crafted with unparalleled expertise and utilizing state-of-the-art technology, Semicorex TaC Coated Graphite Susceptor is engineered to meet the exacting demands of semiconductor manufacturing.
  • TaC Coating Epitaxial Plate

    TaC Coating Epitaxial Plate

    You can rest assured to buy TaC Coating Epitaxial Plate from our factory. Semicorex TaC (Tantalum Carbide) coating epitaxial plate boasts exceptional heat resistance, making it ideal for applications subjected to high temperatures. Its remarkable ability to withstand heat ensures durability and reliability in demanding environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC-coated Wafer Disc

    SiC-coated Wafer Disc

    The Semicorex SiC-coated Wafer Disc represents a leading advancement in semiconductor manufacturing technology, playing an essential role in the complex process of fabricating semiconductors. Engineered with meticulous precision, this disc is crafted from superior SiC-coated graphite, delivering outstanding performance and durability for silicon epitaxy applications. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC-coated Wafer Disc that fuse quality with cost-efficiency.
  • Etching Wafer Carrier

    Etching Wafer Carrier

    Semicorex Etching Wafer Carrier with CVD SiC Coating is an advanced, high-performance solution tailored for demanding semiconductor etching applications. Its superior thermal stability, chemical resistance, and mechanical durability make it an essential component in modern wafer fabrication, ensuring high efficiency, reliability, and cost-effectiveness for semiconductor manufacturers worldwide.*
  • Related Blog
  • Reviews

  • What is P-type SiC wafer?

    A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

  • Coating in the thermal field of semiconductor silicon single crystals

    The coated parts in semiconductor silicon single crystal hot field are generally coated by CVD method, including pyrolytic carbon coating, Silicon Carbide coating and Tantalum Carbide coating, each with different characteristics.

  • Silicon Epitaxial Layers and Substrates in Semiconductor Manufacturing

    In modern electronics, optoelectronics, microelectronics, and information technology fields, semiconductor substrates and epitaxial technologies are indispensable. They provide a solid foundation for manufacturing high-performance, high-reliability semiconductor devices. As technology continues to advance, semiconductor substrates and epitaxial technologies will also progress, bringing new breakthroughs and developments to the future of the semiconductor industry.

  • 4th Generation Semiconductors Gallium Oxide/β-Ga2O3

    The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

  • The Critical Role of SiC Substrates and Crystal Growth in the Semiconductor Industry

    Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

  • Why Choose Pressureless Sintering for SiC Ceramic Preparation?

    The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept