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"Sincerity, Innovation, Rigorousness, and Efficiency" may be the persistent conception of our organization for that long-term to establish jointly with customers for mutual reciprocity and mutual gain for semiconductor ceramic,semiconductor device fabrication,wafer processing,semiconductor production,wafer handling, We generally keep the philosophy of win-win, and develop long-term cooperation connection with buyers from around the planet.We feel that our expansion foundation on customer's achievement, credit rating is our daily life.
semiconductor ceramic, Our company always concentrate on the development of the international market. We've got a lot of customers in Russia , European countries, the USA, the Middle East countries and Africa countries. We always follow that quality is foundation while service is guarantee to meet all customers.

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  • Silicon Carbide SiC Coated Barrel Susceptor

    Silicon Carbide SiC Coated Barrel Susceptor

    Semicorex is a leading independently owned manufacturer of Silicon Carbide SiC Coated Barrel Susceptor, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our Silicon Carbide SiC Coated Barrel Susceptor have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Coated Barrel Susceptor for Epitaxial Growth

    SiC Coated Barrel Susceptor for Epitaxial Growth

    With its superior density and thermal conductivity, the Semicorex SiC Coated Barrel Susceptor for Epitaxial Growth is the ideal choice for use in high-temperature and corrosive environments. Coated with high-purity SiC, this graphite product provides excellent protection and heat distribution, ensuring reliable and consistent performance in semiconductor manufacturing applications.
  • SiC-Coated Crystal Growth Susceptor

    SiC-Coated Crystal Growth Susceptor

    With its high melting point, oxidation resistance, and corrosion resistance, the Semicorex SiC-Coated Crystal Growth Susceptor is the ideal choice for use in single crystal growth applications. Its silicon carbide coating provides excellent flatness and heat distribution properties, making it an ideal choice for high-temperature environments.
  • SiC Coated PSS Etching Carrier

    SiC Coated PSS Etching Carrier

    Wafer carriers used in epixial growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex SiC Coated PSS Etching Carrier engineered specifically for these demanding epitaxy equipment applications. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • TaC Coated Rings

    TaC Coated Rings

    As the professional manufacture, we would like to provide you TaC Coated Rings. Introducing the CVD Tac Coated Ring, a state-of-the-art solution for semiconductor equipment. This cutting-edge product boasts an advanced chemical vapor deposition (CVD) coating that provides exceptional durability and resistance to wear and tear.
  • Plate for Epitaxial Growth

    Plate for Epitaxial Growth

    The Semicorex Plate for Epitaxial Growth stands as a critical element specifically designed to cater to the intricacies of epitaxial processes. Customizable to meet distinct specifications and preferences, our offering delivers an individually tailored solution that seamlessly fits your unique operational needs. We offer a range of customization options, from size alterations to variations in the coating application, equipping us to engineer and supply a product capable of enhancing performance across various application scenarios. We at Semicorex are dedicated to manufacturing and supplying high-performance Plates for Epitaxial Growth that fuse quality with cost-efficiency.
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  • Reviews

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • Gallium Nitride Epitaxial Wafers: An Introduction to the Fabrication Process

    Gallium Nitride (GaN) epitaxial wafer growth is a complex process, often utilizing a two-step method. This method involves several critical stages, including high-temperature baking, buffer layer growth, recrystallization, and annealing. By meticulously controlling the temperature throughout these stages, the two-step growth method effectively prevents wafer warping caused by lattice mismatch or stress, making it the predominant fabrication method for GaN epitaxial wafers globally.

  • What is graphitization degree?

    The degree of graphitization is an essential measure used to assess how close carbon atoms are to forming a tightly-packed hexagonal graphite crystal structure.

  • Method of GaN Crystal Growth

    When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

  • Detailed Explanation of Semiconductor CVD SiC Process Technology(Part.Ⅱ)

    In the chemical vapor deposition (CVD) process, the gases used mainly include reactant gases and carrier gases. Reactant gases provide atoms or molecules for the deposited material, while carrier gases are used to dilute and control the reaction environment. Below are some commonly used CVD gases:

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